Symposium 1989 on VLSI Circuits最新文献

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Automatic gain control (AGC) circuit for high density BiCMOS SRAM 用于高密度BiCMOS SRAM的自动增益控制电路
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037494
H. Tran, P. Fung, D. Scott
{"title":"Automatic gain control (AGC) circuit for high density BiCMOS SRAM","authors":"H. Tran, P. Fung, D. Scott","doi":"10.1109/VLSIC.1989.1037494","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037494","url":null,"abstract":"BiCMOS technolory has been ~ioven to be most effective for improving the performance of SRAMs. A sub 10\"s access time has been reported in jl BiCMOS SRAM of IMeg bit density I] In addition to performance advantaaes. the availability of birk transistors in &CMOS technology has triggered an evolutibn of BiCMOS de\"!\" techniques for improving margin and minimining process sensitivity of Ultra Large Scale IC's. In this paper an Automatic Gain Control (AGC) circuit is discussed. This AGC circuit is applied to a high speed RiCMOS SRAM bitline scheme to control the bitline voltage swings BO that they are independent or temperature, operation and pmcess variations. Utilization of the superior small signal amplification eapabilitu of bioolar tranristor differential sense L~DB to directly coude","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125638332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An 8-bit 20 MS/s CMOS A/D converter with 59 mW power consumption 功耗为59 mW的8位20 MS/s CMOS A/D转换器
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037486
S. Hosotani, T. Miki, A. Maoda, N. Yazawa
{"title":"An 8-bit 20 MS/s CMOS A/D converter with 59 mW power consumption","authors":"S. Hosotani, T. Miki, A. Maoda, N. Yazawa","doi":"10.1109/VLSIC.1989.1037486","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037486","url":null,"abstract":"(MSjs) CMOS AjD con­ verter with SO-mW power consumption has been integrated into an area of 2.09 mm X 2.15 mm. The characteristics of low power consumption and small chip area have been achieved by introducing a new architecture to a subranging AjD converter. In this architecture, both coarse and fine AjD conversions can be accomplished in a unique circuit. Consequently, a large number of comparators and processing circuits for comparison results have been removed from the conventional subranging AjD converter. This arch itecture has been realized by the introduction of a new chopper-type comparator with three input terminals. This comparator makes both coarse and fine comparisons by itself with its sample-and-hold function. The AjD converter has two 8-bit sub-AjD converters which employ this new archi­ tecture, and they are pipelined to improve thc conversion rate. The experimental results have shown good performances. Both the differential and the integral nonlinearity are less than ±O.S LSB at a 2O-MSjs sampling frequency. The effective resolution at 20-MSjs sampling fre­ quency is 7.4 bits at a 1.97-MHz input frequency and 6.7 bits at a 9.79-MHz input frequency. The AjD converter has been fabricated in a I-I'm CMOS technology.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126696627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A self-timed dynamic sensing scheme for 5V only multi-Mb flash E/sup 2/PROMs 一种适用于5V多mb闪存/sup / prom的自定时动态传感方案
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037479
K. Kobayashi, T. Nakayama, M. Hayashikoshi, Y. Miyawaki, Y. Terada, H. Arima, T. Matsukawa, T. Yoshihara
{"title":"A self-timed dynamic sensing scheme for 5V only multi-Mb flash E/sup 2/PROMs","authors":"K. Kobayashi, T. Nakayama, M. Hayashikoshi, Y. Miyawaki, Y. Terada, H. Arima, T. Matsukawa, T. Yoshihara","doi":"10.1109/VLSIC.1989.1037479","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037479","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124514868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 26 dB, 1.2 GHz wideband GaAs MESFET variable gain amplifier 一个26db, 1.2 GHz宽带GaAs MESFET可变增益放大器
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037501
T. Spargo, A. Abidi
{"title":"A 26 dB, 1.2 GHz wideband GaAs MESFET variable gain amplifier","authors":"T. Spargo, A. Abidi","doi":"10.1109/VLSIC.1989.1037501","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037501","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131511005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Programmable vector-matrix multipliers for artificial neural networks 用于人工神经网络的可编程向量矩阵乘法器
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037507
F. Kub, I. Mack, K. Moon
{"title":"Programmable vector-matrix multipliers for artificial neural networks","authors":"F. Kub, I. Mack, K. Moon","doi":"10.1109/VLSIC.1989.1037507","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037507","url":null,"abstract":"For the hyblid digital-analog approach, rhom in Figure 1. the --log loultiplier w e i g h t valves are generated from digical words stored in digital memory. The analog voltages are X-Y addrossed to rhe nulciplier sites using decoding circuitry and are dynsmically stored on capaciCorr aL the gatel of WOSFET conductance elements. The analog voltages are periodicelly refreshed from rhe vsighr values stored in the digital memory.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121469865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An eyperimental 1Mb cache DRAM with ECC 带有ECC的实验性1Mb缓存DRAM
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037481
M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara
{"title":"An eyperimental 1Mb cache DRAM with ECC","authors":"M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara","doi":"10.1109/VLSIC.1989.1037481","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037481","url":null,"abstract":"In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r \" will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l\".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129979723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Circuit design of a 9ns-HIT-delay 32K byte cache macro 延时9ns- hit的32K字节缓存宏的电路设计
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037482
K. Nogami, T. Sakurai, K. Sawada, K. Sakaue, Y. Miyazawa, S. Tanaka, Y. Hiruta, K. Katoh, T. Takayanagi, T. Shirotopi, Y. Itoh, M. Uchma, T. Hzuka
{"title":"Circuit design of a 9ns-HIT-delay 32K byte cache macro","authors":"K. Nogami, T. Sakurai, K. Sawada, K. Sakaue, Y. Miyazawa, S. Tanaka, Y. Hiruta, K. Katoh, T. Takayanagi, T. Shirotopi, Y. Itoh, M. Uchma, T. Hzuka","doi":"10.1109/VLSIC.1989.1037482","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037482","url":null,"abstract":"Introduction After a Reduced Insrmction Set Computer (RISCJ was shown to be effective in increasing CPU perfomnceIl1, s e v d attempls have teen made to funher improve the CPU performance by including cache memory an the same chipl21. However, the formerly reported cache size is limited up to 2K bym. which is not sufficient to obtain more than 95% hit rate. This paper describes a 32K byte cache macro with an erperimmml RISC implemented on the Same chip.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134271665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An /spl alpha/-immune, 2V supply voltage SRAM using polysilicon PMOS load cell 采用多晶硅PMOS负载传感器的一种/spl α /-免疫,2V供电电压SRAM
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037473
K. Ishibashi, T. Yamanaka, K. Shimohigashi
{"title":"An /spl alpha/-immune, 2V supply voltage SRAM using polysilicon PMOS load cell","authors":"K. Ishibashi, T. Yamanaka, K. Shimohigashi","doi":"10.1109/VLSIC.1989.1037473","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037473","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134264207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Improving bandwidth and error rate in flash converters 改进闪存转换器的带宽和错误率
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037485
C. Mangelsdorf
{"title":"Improving bandwidth and error rate in flash converters","authors":"C. Mangelsdorf","doi":"10.1109/VLSIC.1989.1037485","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037485","url":null,"abstract":"To achieve high input bandwidth, the flash architecture of Figure 1 vas used. A preamp buffers each of the 257 latching comparators improving dynamic response and isolating the input and reference ladder from snitching transients. Dual supplies (+SV and -5.2V) are used to provide a convenient ground centered input span with large over-range capability. The extra headroom afforded by dual supplies permits a large rwerse bias on the collector-base junctions of the input transistors. This avoids the distortion caused by voltage dependent input capacitance found in single supply flash ADCs.[l] A special form of cascode reduces Miller capacitance loading of the input pair wbile maintaining high switching speed. The small physical siie of the input devices (5.5 x 1.0 um emitters) leads to a tiny input capacitance of ZOpF, and contributes to high input bandwidth.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126367657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
An 8 bit, 200 MHz BiCMOS comparator 一个8位,200兆赫BiCMOS比较器
Symposium 1989 on VLSI Circuits Pub Date : 1989-05-25 DOI: 10.1109/VLSIC.1989.1037489
P. Lim, B. Wooley
{"title":"An 8 bit, 200 MHz BiCMOS comparator","authors":"P. Lim, B. Wooley","doi":"10.1109/VLSIC.1989.1037489","DOIUrl":"https://doi.org/10.1109/VLSIC.1989.1037489","url":null,"abstract":"","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126922847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
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