带有ECC的实验性1Mb缓存DRAM

M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara
{"title":"带有ECC的实验性1Mb缓存DRAM","authors":"M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara","doi":"10.1109/VLSIC.1989.1037481","DOIUrl":null,"url":null,"abstract":"In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r \" will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l\".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"An eyperimental 1Mb cache DRAM with ECC\",\"authors\":\"M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara\",\"doi\":\"10.1109/VLSIC.1989.1037481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r \\\" will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l\\\".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.\",\"PeriodicalId\":136228,\"journal\":{\"name\":\"Symposium 1989 on VLSI Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1989 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1989.1037481\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

在最近的微处理器(MPU)的发展中,对快速访问和数据存储的要求越来越高。对于低端工作站和个人计算机,需要一种性价比高的缓存子系统。另一方面,对于dram来说,随着密度的增加,a粒子诱导的“软e - r”等可靠性问题将更加严重。为了克服这些问题,我们报道了带有片上ECC (Error Checking and Correcting)电路的dram。但使用ECC电路时,接入信号会被延迟,从而对信号进行检测和纠错。本文提出了一种基于ECC电路的高速缓存DRAM。该ECC电路提高了DRAM数据的可靠性。片上缓存可以提供高速的数据映射,减轻纠错的访问时间损失,减少平均访问时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An eyperimental 1Mb cache DRAM with ECC
In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r " will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.
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