{"title":"A review of superconducting three-terminal devices","authors":"U. Kawabe","doi":"10.1109/VLSIC.1989.1037468","DOIUrl":null,"url":null,"abstract":"Superconducting three-terminal devices have been extensively given attention as one of future digital devices since Bcdnorz and Mueller discovered high-critical-temperature superconductivity in the La-Ba-Cu-0 system. The use of zero-resistance superconductivity and low noise cryogenics is expectcd for a limiting field of silicone semiconductor devices. In this paper, it is worthwhile to review some superconducting threeterminal devices expected for fulure devices though almost the materials used are low-temperature superconductors. The feature of various devices hitheno reported is discussed. The possibility and problem of high-temperature superconducting devices are also discussed.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"257 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Superconducting three-terminal devices have been extensively given attention as one of future digital devices since Bcdnorz and Mueller discovered high-critical-temperature superconductivity in the La-Ba-Cu-0 system. The use of zero-resistance superconductivity and low noise cryogenics is expectcd for a limiting field of silicone semiconductor devices. In this paper, it is worthwhile to review some superconducting threeterminal devices expected for fulure devices though almost the materials used are low-temperature superconductors. The feature of various devices hitheno reported is discussed. The possibility and problem of high-temperature superconducting devices are also discussed.