ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)最新文献

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Partitioning framework for less restricted partitioning problems 用于限制较少的分区问题的分区框架
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820836
Hyunok Oh, S. Ha
{"title":"Partitioning framework for less restricted partitioning problems","authors":"Hyunok Oh, S. Ha","doi":"10.1109/ICVC.1999.820836","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820836","url":null,"abstract":"Since the hardware-software partitioning problem is a key aspect of the codesign of digital electronic systems, extensive research has been performed with diverse definitions of partitioning problems. However, existent partitioning solutions are not applicable to many real applications partly because of restricted input specification or insufficient constraints. In this paper, we aim to identify the remaining issues to be solved in order to enlarge the target applications of automatic partitioning. We define the problem space with two curves of input specification and partitioning constraints and position each previous hardware/software partitioning algorithm in that space. We also list some of future partitioning problems that extend both dimensions of the problem space. Finally, we solve one remaining partitioning problem and show the experimental results.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"59 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81378868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A bias dependent source/drain resistance model in LDD MOSFET devices for distortion analysis 用于畸变分析的LDD MOSFET器件中与偏置相关的源漏电阻模型
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820870
Kwang-Hoon Oh, Zhiping Yu, R. Dutton
{"title":"A bias dependent source/drain resistance model in LDD MOSFET devices for distortion analysis","authors":"Kwang-Hoon Oh, Zhiping Yu, R. Dutton","doi":"10.1109/ICVC.1999.820870","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820870","url":null,"abstract":"In order to describe nonlinear distortion behavior precisely, an equivalent resistance model for n/sup -/ source/drain regions of an LDD MOSFET featuring gate bias and drain bias dependence is implemented. Separating the LDD device into an intrinsic MOSFET and two buried channel (BC) MOSFETs, a resistance model has been developed in a physically consistent manner. The proposed resistance model was confirmed using 2D device simulation results and its viability for distortion analysis has been investigated.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"13 1","pages":"190-193"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82470453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
LSI design toward 2010 and low-power technology 面向2010年的LSI设计和低功耗技术
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820921
T. Sakurai
{"title":"LSI design toward 2010 and low-power technology","authors":"T. Sakurai","doi":"10.1109/ICVC.1999.820921","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820921","url":null,"abstract":"If we look into the scaling law carefully, we find that three crises can be foreseen for realizing LSI's in the year 2010: power crisis, interconnection crisis, and complexity crisis. Lowering supply voltage (V/sub DD/) is very effective in reducing the power but the threshold voltage (V/sub TH/) should be reduced at the same time for high-speed operation. The low V/sub TH/ however, increases the leakage current. To overcome this situation, V/sub TH/ and V/sub DD/ control through the use of multiple V/sub TH/, variable V/sub TH/, multiple V/sub DD/ and variable V/sub DD/ are being pursued. At the system level, a system LSI approach is promising for realizing low power. The new trend is to exploit the cooperation of software and hardware. For sub 1-volt design, abnormal temperature dependence of drain current may be important. The interconnection will determine cost, delay, power, reliability and turn-around time of future LSI's. The RC delay problem can be solved through an LSI architecture realizing \"the further, the less communication\" with the help of local memories. The complexity issue can only be solved by the sharing and re-use of design data, and the so-called IP-based design will be preferable.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"7 1","pages":"325-334"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87507327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Improvement of hot carrier lifetime by cleaning process prior to selective reoxidation in metal gate LDD nMOSFETs 金属栅极LDD nmosfet中选择性再氧化前清洗工艺对热载流子寿命的改善
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820978
Jae-Hyung Kim, J. Choy, Duk-Hee Lee, Shin-Young Cheong, Young-Hoon Kim, J. Son, Youngjong Lee, Kyungho Lee
{"title":"Improvement of hot carrier lifetime by cleaning process prior to selective reoxidation in metal gate LDD nMOSFETs","authors":"Jae-Hyung Kim, J. Choy, Duk-Hee Lee, Shin-Young Cheong, Young-Hoon Kim, J. Son, Youngjong Lee, Kyungho Lee","doi":"10.1109/ICVC.1999.820978","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820978","url":null,"abstract":"We have investigated the effects of the cleaning process prior to selective reoxidation on the device reliability against hot carrier degradation. A remarkable increase in the lifetimes was obtained for the devices in which the remaining oxide under the LDD spacer was partially removed. This additional cleaning process was found to effectively improve the interface quality of the spacer bottom oxide.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"40 1","pages":"487-489"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86512405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A design of 2-D DCT/IDCT for real-time video applications 用于实时视频应用的二维DCT/IDCT设计
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820999
Igkyun Kim, J. Cha, Hanjin Cho
{"title":"A design of 2-D DCT/IDCT for real-time video applications","authors":"Igkyun Kim, J. Cha, Hanjin Cho","doi":"10.1109/ICVC.1999.820999","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820999","url":null,"abstract":"In this paper, we present the implementation of the 2-D DCT/IDCT that is capable of processing an 8/spl times/8 pixel block and satisfies the accuracy specification of ITU-T. This circuit was designed for real-time processing of 33 MHz sample rate video data. It uses row-column decomposition to implement a two dimensional transform. Distributed arithmetic combined with bit-serial and bit-parallel structures is used to implement the required vector inner product concurrently. The resultant circuit only uses memory and shift registers, and adders. No multipliers are required. The circuit has been laid out using a 0.5 /spl mu/m CMOS technology, and contains 10000 gates approximately and 64/spl times/16 bit memory.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"27 1","pages":"557-559"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86955306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
An integrated CDMA intermediate-frequency transceiver for 10-MHz wireless local loop 用于10mhz无线本地环路的集成CDMA中频收发器
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820932
Jong-Moon Kim, Ho-Jun Song, Jae-heon Lee, Sang-Woo Hwang
{"title":"An integrated CDMA intermediate-frequency transceiver for 10-MHz wireless local loop","authors":"Jong-Moon Kim, Ho-Jun Song, Jae-heon Lee, Sang-Woo Hwang","doi":"10.1109/ICVC.1999.820932","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820932","url":null,"abstract":"This paper describes a 10-MHz bandwidth WLL (Wireless Local Loop) intermediate frequency (IF) transceiver integrated circuit. The chip interfaces between the RF (radio frequency) and the digital modem sections, and performs the IF-to-baseband (Rx) and baseband-to-IF (Tx) frequency conversions. It incorporates two 100-dB VGAs (variable gain amplifiers), two fixed-frequency PLLs, four low pass filters, two 4-bit A/D converters and two 10-bit D/A converters. It has been implemented in a 0.6-/spl mu/m silicon CMOS process. The PLLs include the VCOs, dividers, phase detectors, and charge pump circuits on chip. The only external requirements are the varactor-tuned LC tank circuit and PLL loop filter circuit. Total supply current is about 57 mA at 3.0-5.0 V.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"52 1","pages":"368-371"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78333045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved planarization method using sandwiched hard layer (SHaL) CMP 改进的夹层硬层(SHaL) CMP平面化方法
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820986
J.Y. Kim, B. Yoon, S. Hah, J. Moon, S.I. Lee
{"title":"Improved planarization method using sandwiched hard layer (SHaL) CMP","authors":"J.Y. Kim, B. Yoon, S. Hah, J. Moon, S.I. Lee","doi":"10.1109/ICVC.1999.820986","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820986","url":null,"abstract":"CMP uniformity and planarity directly affect the Post-CMP TTV (Total Thickness Variation). Decreased TTV is necessary for successful patterning of devices. The trend in scaling down of device feature size requires smaller TTV and hence tighter CMP performances. The three layer pad stack with IC-1000/hard layer/foam layer (SHaL) was designed to improve the planarity with minimal deterioration of CMP uniformity. SHaL CMP process improves the planarity with negligible effect on uniformity. Reduced CMP time and less ILD oxide is achievable with the SHaL CMP process. Therefore preliminary tests show that improvements in post-CMP TTV can be achieved with reduced CoO. Further enhancements in the efficiency of the process is under investigation.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"27 1","pages":"504-505"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79302946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An efficient turbo decoder architecture for IMT2000 一种适用于IMT2000的高效涡轮解码器架构
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820911
I. S. Jeon, Bong Seop Song, K. Kim, Han Jin Cho, W. Kim
{"title":"An efficient turbo decoder architecture for IMT2000","authors":"I. S. Jeon, Bong Seop Song, K. Kim, Han Jin Cho, W. Kim","doi":"10.1109/ICVC.1999.820911","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820911","url":null,"abstract":"In this paper, we present an efficient architecture of turbo decoder for IMT2000 system. We introduce a base 2 logarithmic maximum a-posteriori algorithm (log/sub 2/MAP) whose architecture is simpler than that of the conventional natural logarithmic MAP algorithm (log/sub e/MAP). With log/sub 2/MAP, we obtain a '2 function' which is simpler than the 'E function' used by log/sub e/MAP. In order to implement the architecture of the 2 function, we use approximated binary logarithmic algorithm (ABLA) which has been usefully adopted in DSP. Using ABLA, we can reduce the RAM size from 1 kbytes to 96 bytes, which can be implemented using combinational logic gates. Also, we design the simple normalization module by making all the branch metrics to have positive values. We introduce reverse interleaver and deinterleaver to calculate forward and reverse state metric simultaneously. Using our architecture, we obtained BER of 9.79/spl times/10/sup -7/ at Eb/No of 2 dB and 5th iterations for constraint length K=4, code rate R=1/2, jumping window of 512 bits and interleaver size of 1144 bits, i.e. data rate of 57.6 kbps.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"10 1","pages":"301-304"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88678664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra thin-oxide damage from gate charging during PETEOS deposition processing PETEOS沉积过程中栅极充电造成的超薄氧化物损伤
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820894
Young-Gwan Kim, Hazoong Kim, Kang-Sik Youn, D. Kang, J. Hwang
{"title":"Ultra thin-oxide damage from gate charging during PETEOS deposition processing","authors":"Young-Gwan Kim, Hazoong Kim, Kang-Sik Youn, D. Kang, J. Hwang","doi":"10.1109/ICVC.1999.820894","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820894","url":null,"abstract":"This paper presents a study of plasma-enhanced tetraethylorthosilicate oxide process (PETEOS) induced charging damage to thin gate oxide reliability of p-and n-MOS after gate poly processing. We explain the plasma induced gate oxide charging mechanism with the differences of ultra thin oxide (45 /spl Aring/) breakdown characteristics of p- and n-MOS capacitors.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"36 1","pages":"245-248"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89112245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New shallow trench isolation scheme with /spl alpha/-Si absorption layer for sub-0.18 /spl mu/m technology 采用/spl α /-Si吸收层的浅沟隔离新方案,适用于低于0.18 /spl mu/m的技术
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI: 10.1109/ICVC.1999.820847
J. Ku, Sue J. Oh, S. Hong, Hyeongsoo Kim, Sibum Kim, Sam-Dong Kim, Chung-Tae Kim
{"title":"New shallow trench isolation scheme with /spl alpha/-Si absorption layer for sub-0.18 /spl mu/m technology","authors":"J. Ku, Sue J. Oh, S. Hong, Hyeongsoo Kim, Sibum Kim, Sam-Dong Kim, Chung-Tae Kim","doi":"10.1109/ICVC.1999.820847","DOIUrl":"https://doi.org/10.1109/ICVC.1999.820847","url":null,"abstract":"/spl alpha/-Si Absorption Layer (AL) was used in the sub 0.18 /spl mu/m Shallow Trench Isolation (STI) patterning to improve the pattern uniformity without additional removal step. It was confirmed by the results of reflectivity simulation at 248 nm that the thickness of /spl alpha/-Si for AL on the pad nitride was at least 10 nm to obtain uniform reflection to Photo Resist (PR). The pattern uniformity within 8\" wafer was improved by a factor of 3 from 39 nm (3/spl sigma/) without AL to 14 nm (3/spl sigma/) with /spl alpha/-Si. This /spl alpha/-Si up to 15 nm was fully converted to the oxide after thermal oxidation steps to recover the damaged trench surface. Our results corroborate that the optimum thickness of CVD /spl alpha/-Si AL is 10/spl sim/15 nm for the sub-0.18 /spl mu/m STI process.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"74 1","pages":"130-132"},"PeriodicalIF":0.0,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79489868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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