Ultra thin-oxide damage from gate charging during PETEOS deposition processing

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820894

Young-Gwan Kim, Hazoong Kim, Kang-Sik Youn, D. Kang, J. Hwang

引用次数: 0

Abstract

This paper presents a study of plasma-enhanced tetraethylorthosilicate oxide process (PETEOS) induced charging damage to thin gate oxide reliability of p-and n-MOS after gate poly processing. We explain the plasma induced gate oxide charging mechanism with the differences of ultra thin oxide (45 /spl Aring/) breakdown characteristics of p- and n-MOS capacitors.

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PETEOS沉积过程中栅极充电造成的超薄氧化物损伤

本文研究了等离子体增强四乙基硅酸氧化物工艺(PETEOS)对p- mos和n-MOS经栅极多加工后的薄栅极氧化物可靠性造成的充电损伤。从p- mos电容器和n-MOS电容器超薄氧化物(45 /spl)击穿特性的差异来解释等离子体诱导栅极氧化物充电机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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