采用/spl α /-Si吸收层的浅沟隔离新方案,适用于低于0.18 /spl mu/m的技术

J. Ku, Sue J. Oh, S. Hong, Hyeongsoo Kim, Sibum Kim, Sam-Dong Kim, Chung-Tae Kim
{"title":"采用/spl α /-Si吸收层的浅沟隔离新方案,适用于低于0.18 /spl mu/m的技术","authors":"J. Ku, Sue J. Oh, S. Hong, Hyeongsoo Kim, Sibum Kim, Sam-Dong Kim, Chung-Tae Kim","doi":"10.1109/ICVC.1999.820847","DOIUrl":null,"url":null,"abstract":"/spl alpha/-Si Absorption Layer (AL) was used in the sub 0.18 /spl mu/m Shallow Trench Isolation (STI) patterning to improve the pattern uniformity without additional removal step. It was confirmed by the results of reflectivity simulation at 248 nm that the thickness of /spl alpha/-Si for AL on the pad nitride was at least 10 nm to obtain uniform reflection to Photo Resist (PR). The pattern uniformity within 8\" wafer was improved by a factor of 3 from 39 nm (3/spl sigma/) without AL to 14 nm (3/spl sigma/) with /spl alpha/-Si. This /spl alpha/-Si up to 15 nm was fully converted to the oxide after thermal oxidation steps to recover the damaged trench surface. Our results corroborate that the optimum thickness of CVD /spl alpha/-Si AL is 10/spl sim/15 nm for the sub-0.18 /spl mu/m STI process.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"74 1","pages":"130-132"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New shallow trench isolation scheme with /spl alpha/-Si absorption layer for sub-0.18 /spl mu/m technology\",\"authors\":\"J. Ku, Sue J. Oh, S. Hong, Hyeongsoo Kim, Sibum Kim, Sam-Dong Kim, Chung-Tae Kim\",\"doi\":\"10.1109/ICVC.1999.820847\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"/spl alpha/-Si Absorption Layer (AL) was used in the sub 0.18 /spl mu/m Shallow Trench Isolation (STI) patterning to improve the pattern uniformity without additional removal step. It was confirmed by the results of reflectivity simulation at 248 nm that the thickness of /spl alpha/-Si for AL on the pad nitride was at least 10 nm to obtain uniform reflection to Photo Resist (PR). The pattern uniformity within 8\\\" wafer was improved by a factor of 3 from 39 nm (3/spl sigma/) without AL to 14 nm (3/spl sigma/) with /spl alpha/-Si. This /spl alpha/-Si up to 15 nm was fully converted to the oxide after thermal oxidation steps to recover the damaged trench surface. Our results corroborate that the optimum thickness of CVD /spl alpha/-Si AL is 10/spl sim/15 nm for the sub-0.18 /spl mu/m STI process.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"74 1\",\"pages\":\"130-132\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820847\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用/spl α /-Si吸收层(AL)在低于0.18 /spl mu/m的浅沟隔离(STI)图中,无需额外去除步骤即可提高图的均匀性。248 nm处的反射率模拟结果证实,AL在氮化衬垫上的/spl α /-Si厚度至少为10 nm才能获得对光阻(PR)的均匀反射。8”晶圆内的图案均匀性从没有AL的39 nm (3/spl sigma/)提高到/spl alpha/-Si的14 nm (3/spl sigma/),提高了3倍。这种/spl α /-Si在热氧化步骤后完全转化为氧化物,以恢复受损的沟槽表面。我们的结果证实,在低于0.18 /spl mu/m的STI工艺中,CVD /spl α /-Si AL的最佳厚度为10/spl sim/15 nm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New shallow trench isolation scheme with /spl alpha/-Si absorption layer for sub-0.18 /spl mu/m technology
/spl alpha/-Si Absorption Layer (AL) was used in the sub 0.18 /spl mu/m Shallow Trench Isolation (STI) patterning to improve the pattern uniformity without additional removal step. It was confirmed by the results of reflectivity simulation at 248 nm that the thickness of /spl alpha/-Si for AL on the pad nitride was at least 10 nm to obtain uniform reflection to Photo Resist (PR). The pattern uniformity within 8" wafer was improved by a factor of 3 from 39 nm (3/spl sigma/) without AL to 14 nm (3/spl sigma/) with /spl alpha/-Si. This /spl alpha/-Si up to 15 nm was fully converted to the oxide after thermal oxidation steps to recover the damaged trench surface. Our results corroborate that the optimum thickness of CVD /spl alpha/-Si AL is 10/spl sim/15 nm for the sub-0.18 /spl mu/m STI process.
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