改进的夹层硬层(SHaL) CMP平面化方法

J.Y. Kim, B. Yoon, S. Hah, J. Moon, S.I. Lee
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引用次数: 0

摘要

CMP均匀性和平面性直接影响CMP后总厚度变化(TTV)。降低TTV是成功设计器件的必要条件。设备特征尺寸的缩小趋势需要更小的TTV,因此要求更严格的CMP性能。设计了IC-1000/硬层/泡沫层(SHaL)的三层垫层堆栈,以提高平面度,同时最小程度地降低CMP均匀性。SHaL CMP工艺提高了平面度,对均匀性的影响可以忽略不计。使用SHaL CMP工艺可以减少CMP时间和减少ILD氧化物。因此,初步测试表明,cmp后TTV的改善可以通过降低CoO来实现。目前正在研究如何进一步提高这一进程的效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved planarization method using sandwiched hard layer (SHaL) CMP
CMP uniformity and planarity directly affect the Post-CMP TTV (Total Thickness Variation). Decreased TTV is necessary for successful patterning of devices. The trend in scaling down of device feature size requires smaller TTV and hence tighter CMP performances. The three layer pad stack with IC-1000/hard layer/foam layer (SHaL) was designed to improve the planarity with minimal deterioration of CMP uniformity. SHaL CMP process improves the planarity with negligible effect on uniformity. Reduced CMP time and less ILD oxide is achievable with the SHaL CMP process. Therefore preliminary tests show that improvements in post-CMP TTV can be achieved with reduced CoO. Further enhancements in the efficiency of the process is under investigation.
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