2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)最新文献_第2页

Halogen free flame retardants for Epoxy substrate in electronic applications 电子环氧基板用无卤阻燃剂

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746714

W.K. Patrick Lim, M. Mariatti, W. Chow, K. Mar

{"title":"Halogen free flame retardants for Epoxy substrate in electronic applications","authors":"W.K. Patrick Lim, M. Mariatti, W. Chow, K. Mar","doi":"10.1109/IEMT.2010.5746714","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746714","url":null,"abstract":"Epoxy resins together with glass fibers had been extensively used as the core substrate in electronic applications due to its superior mechanical properties and chemical resistance. Due to its application in high heat environment, flame retardants became a required additive for the epoxy resins to prevent any flame mishaps. In this paper, intumescent and nitrogen based flame retardants, specifically the ammonium polyphosphate (APP) and melamine cyanurate (MC) are utilized in the epoxy/glass fiber composite system. The main purpose is to achieve sufficient flammability properties without harming their mechanical properties and the environment. The flame retardant/epoxy/glass fibers composites were prepared using hand-lay up, followed by vacuum bagging process. For the APP, even as low as 5% is sufficient to achieve good rating under the UL-94 and limiting oxygen index (LOI) test, while MC required up to 20% to achieve similar results. Meanwhile, it was observed that the flame retardants also have some effect on the flexural strength and modulus. In conclusion, both flame retardants ammonium polyphosphate and melamine cyanurate are environmental friendly and can achieve similar or better results in terms of flammability properties compared to the halogenated flame retardants.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126922228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

TRIZ: Application of advanced Problem Solving methodology (ARIZ) in manufacturing 高级问题解决方法(ARIZ)在制造业中的应用

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746682

T. Yeoh, T. Yeoh

引用次数: 2

3DFlex: A flexible system for total visual inspection of bumped devices 3DFlex:一个灵活的系统，用于对碰撞设备进行全面的目视检查

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746679

Y.L. de Meneses, Jerome Paratte, Peeyush Bhatia, Serge Kunzli

引用次数: 0

Design an Integrated Microprocessor Supervisory Chip for monitoring power failure 设计一种用于电源故障监测的集成微处理器监控芯片

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746694

N. Intan, M. Amir Abas, S. Sakrani

引用次数: 3

Advanced finite element model on Copper wire ball bonding 铜丝球键合的先进有限元模型

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746692

H. Hsu, Hong-Shen Chang, S. Tsao, S. Fu

{"title":"Advanced finite element model on Copper wire ball bonding","authors":"H. Hsu, Hong-Shen Chang, S. Tsao, S. Fu","doi":"10.1109/IEMT.2010.5746692","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746692","url":null,"abstract":"The mechanism of wirebonding bondability for ultra thin Copper wire is described in this research. Two major analyses are conducted in the present paper. In the first, the characteristic of heat affected zone (HAZ) and free air ball (FAB) on thin Copper (Cu) wire have been carefully experimental measured. Thin film interfacial micro-tribology behavior between Cu FAB and Al pad is examined by Atomic Force Microscopy (AFM). Secondary, the dynamic response on Aluminum (Al) bond pad and beneath the pad during wirebonding process has been successfully predicted by finite element analysis (FEA). Tensile mechanical properties of ultra thin Cu wire before/after electric flame-off (EFO) process have been investigated by self-design pull test fixture. Experimental obtained hardening constant in Hell-Petch equation has significantly influence on the localize stressed area on Al pad. This would result in Al pad squeezing (large plastic deformation) around the smashed FAB during impact stage and the consequent thermosonic vibration stage. Microstructure of FAB is also carefully investigated by nano indentation instruments. A real-time secondary EFO scheme has been conducted to reduce the strength of Cu wire and increase the bondability. All the measured data serves as material inputs for the finite element model based on explicit software ANSYS/LS-DYNA. A series of comprehensive FEA parametric predictions have been performed in this paper.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122829183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

High-speed vision challenge for 100% online on-Strip inspection 100%在线带材检测的高速视觉挑战

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746670

Chen Wanliang, X. Yongrong, Ruan Jianhua

引用次数: 0

Progressive damage in Sn-4Ag-0.5Cu solder joints during flexural fatigue of a BGA package BGA封装弯曲疲劳过程中Sn-4Ag-0.5Cu焊点的渐进性损伤

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746689

N. Shaffiar, W. K. Loh, N. Kamsah, M. Tamin

引用次数: 0

Phase diagram, thermodynamics and microstructure of Al-Mg system Al-Mg体系的相图、热力学和微观结构

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746713

S. Zahi, A. R. Daud

引用次数: 2

Application of finite element analysis to reduce problem of ground ring delamination 应用有限元分析减少地环分层问题

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746690

F. Y. Lee, C. Meng, Le Yang

{"title":"Application of finite element analysis to reduce problem of ground ring delamination","authors":"F. Y. Lee, C. Meng, Le Yang","doi":"10.1109/IEMT.2010.5746690","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746690","url":null,"abstract":"Exposed pad packages were first introduced for their superior electrical and thermal performance. Some of the exposed pad packages do include a separate ground ring structure that is situated between the die pad and inner end of the leads. The ground ring is directly connected to the exposed pad. Multiple ground wires can then be bonded on the ground rings without the need to increase the pin count on the leadframe. Initial evaluation results indicate that ground ring is very prone to delaminating after undergoing moisture sensitive level (MSL) condition. Delamination occurs when external stress, exceeds the adhesion strength between mold compound and leadframe. Delamination on the ground ring can affect wire bond integrity. The objective of this paper is to reduce ground ring delamination using finite element analysis. Finite element analysis is used to carry out thermal stress simulation. The stress is generated by subjecting the package to a temperature change of −65°C to 150 °C. The thermal stress analysis helps to define area of ground ring with the highest stress concentration. Subsequently, various design parameters such as thickness, dimension, shape and etc are varied and analyzed. The leadframe design combination with the most optimum predicted stress distribution is then identified. Final result indicates that the optimized leadframe design and dimension are the main factors to improve the robustness that able to withstand the thermal stress induced by preconditioning and temperature cycling under automotive requirement.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123214525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shorten Electrical Test Time with Double Ramping Test Method 采用双斜坡试验方法缩短电气试验时间

2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT) Pub Date : 2010-11-01 DOI: 10.1109/IEMT.2010.5746725

Tai Keong Lee, Ho Tze Yuan

{"title":"Shorten Electrical Test Time with Double Ramping Test Method","authors":"Tai Keong Lee, Ho Tze Yuan","doi":"10.1109/IEMT.2010.5746725","DOIUrl":"https://doi.org/10.1109/IEMT.2010.5746725","url":null,"abstract":"The basic principle of double ramping test method involves ramping two voltages at different slew rate measuring the threshold and calculates the delay time at the same test setup. The test method available at present are performed in two separate stages which cause a longer test time and require different type of instrument, example using analog and high speed digital instruments. Analog instrument is used for obtaining the threshold while high speed digital instrument is used for fast ramp at input pin. In this project, the relation of threshold voltage and delay time was studied. Voltage regulator TLE7278-2 was chosen for this study. This method was found to be an efficient method in performing threshold and delay time tests. One time test setup was sufficient to obtain two test results. This shortens the required test time, at the same time provide good repeatability measurement. As a result, the test time was shortened by more than 5%. It is evident from the findings that double ramping test method resulted shorter test time in obtaining the threshold voltage and delay time. On top of that, it will spare some unused digital instrument and provide more flexibility for higher test parallelism.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123353955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0