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2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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Low power injection-locked frequency divider using native MOS 采用原生MOS的低功率注入锁定分频器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588415
S. Jang, W. Lai, Wei-Te Liu, C. Hsue
{"title":"Low power injection-locked frequency divider using native MOS","authors":"S. Jang, W. Lai, Wei-Te Liu, C. Hsue","doi":"10.1109/IMWS-AMP.2016.7588415","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588415","url":null,"abstract":"This paper presents a 0.55V and low power divided-by-2 injection-locked frequency divider (ILFD) using native nMOS as the injection MOSFET with threshold voltage nearly equal to 0. At the injection power of 0dBm, the measured locking range is from 6.1 to 7.45 GHz. Excluding output buffers the ILFD consumes the power 0.69 mW under a standard supply of 0.55 V.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115456256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A compact dual-band monopole antenna for 4G LTE and WIFI utilizations 适用于4G LTE和WIFI的紧凑型双频单极天线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588432
Yuan Zhu, Min Li, H. He
{"title":"A compact dual-band monopole antenna for 4G LTE and WIFI utilizations","authors":"Yuan Zhu, Min Li, H. He","doi":"10.1109/IMWS-AMP.2016.7588432","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588432","url":null,"abstract":"In this paper presented a CPW-fed monopole antenna,which design for WiFi and 4G (LTE) utilizations. The proposed antenna contains a U- slot in the circular patch with gradually varied ground to improve the impedance match, and it occupies a compact size of 42*28.38*1.5mm3. Through simulations and measurements, the proposed antenna with dual-band operation is suitable to for 4G LTE and WiFi utilizations in the 2.28GHz to 2.82GHz band and 3.87GHz to 6.0GHz band.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116604458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A ultra-wideband empirical large-signal model for AlGaAs/GaAs HEMTs AlGaAs/GaAs hemt的超宽带经验大信号模型
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588313
Yonghao Jia, Yuehang Xu, Xi Chen, Changsi Wang
{"title":"A ultra-wideband empirical large-signal model for AlGaAs/GaAs HEMTs","authors":"Yonghao Jia, Yuehang Xu, Xi Chen, Changsi Wang","doi":"10.1109/IMWS-AMP.2016.7588313","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588313","url":null,"abstract":"An accurate large-signal GaAs HEMT modeling is very important for microwave and millimeter wave power MMIC amplifier design. This paper presents a complete GaAs HEMT model suitable for ultra-wide band application. The model is realized with an improved drain current (Ids) formulation with self-heating and charge trapping modification. This large-signal GaAs HEMT modeling is validated for a wideband frequency from 12GHz to 40GHz and can predict fundamental output power, gain, and power added efficiency accurately.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123371828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Novel liquid crystal based leaky wave antenna 一种新型液晶漏波天线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588324
Bang-Jun Che, F. Meng, Yue-Long Lyu, Qun Wu
{"title":"A Novel liquid crystal based leaky wave antenna","authors":"Bang-Jun Che, F. Meng, Yue-Long Lyu, Qun Wu","doi":"10.1109/IMWS-AMP.2016.7588324","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588324","url":null,"abstract":"A Novel electrically controllable composite right/left-handed leaky wave antennas (CRLH-LWAs) based on liquid crystal (LC) is proposed. Simulation results show the antenna exhibits a simulated beam scanning angle of -47° to +56° over the frequency range of from 11.8 GHz to 13 GHz. A simulated bandwidth from 11.78 GHz to 13.09 GHz is achieved. By steering the permittivity of LC, the antenna presents a simulated range of electrically beam steering from -21° to +23° is presented at 12.4GHz.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122686965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An S-band dual-channel receiver module based on the technology of TSV 基于TSV技术的s波段双通道接收模块
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588341
Zhongjun Tang, Shuwei He, Yijun Chen, Liu-lin Hu
{"title":"An S-band dual-channel receiver module based on the technology of TSV","authors":"Zhongjun Tang, Shuwei He, Yijun Chen, Liu-lin Hu","doi":"10.1109/IMWS-AMP.2016.7588341","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588341","url":null,"abstract":"In this paper, the technology of through silicon via (TSV) is applied to radio frequency (RF) receiver module. A grounded coplanar waveguide (GCPW) with TSV is proposed, through the simulation, and the improvement of TSV on RF transmission performance is studied, including TSV's aperture size, density, arrangement and so on. This paper also studies basic components model such as resistance, capacitance and inductance on the TSV motherboard. Then, an S-band dual-channel receiver module based on the technology of TSV is presented. Sixteen chips are integrated in the receiver module such as amplifier chips, power splitter chips, phase shifter chips and attenuator chips. The size of the final receiver module we proposed is 25mm×18mm×1.5mm, which is 2.5% of traditional RF receiver module, and the package is 8g, which is also 2.5% of the traditional RF receiver module.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128279184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A D-band 4×4 PA array with 39dBm EIRP using 0.13-µm SiGe BiCMOS 采用0.13µm SiGe BiCMOS的39dBm EIRP的d波段4×4 PA阵列
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588411
Bohua Cui, Yihu Li, Xiaodong Deng, Hailin Tang, Ruitao Wang, Haitao Liu, Y. Xiong
{"title":"A D-band 4×4 PA array with 39dBm EIRP using 0.13-µm SiGe BiCMOS","authors":"Bohua Cui, Yihu Li, Xiaodong Deng, Hailin Tang, Ruitao Wang, Haitao Liu, Y. Xiong","doi":"10.1109/IMWS-AMP.2016.7588411","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588411","url":null,"abstract":"A 4×4 power amplifier (PA) array with end-fire on chip antennas is presented in this paper. In the PA array module, four-chips are stacked vertically and spaced by the metal holders. In a single chip, four PA blocks with a 1×4 end-fire on-chip antenna are integrated. 0.13-μm SiGe BiCMOS process is used for fabrication with the experimental f<sub>T</sub> and f<sub>MAX</sub> of 210 and 260 GHz, respectively. The 4×4-PA-array module achieves a measured maximal effective isotropic radiated power (EIRP) of 39 dBm at 135GHz. The whole module has the physical dimensions of 24×35×24 mm<sup>3</sup> and it consumes 19 W from a 6.5 V DC supply. This module can easily be scaled to any M×N array and hence, further improve the EIRP.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127309646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radio-frequency identification (RFID) antenna directly printed by electrospraying 通过电喷涂直接打印的射频识别(RFID)天线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588371
Haoyang Zhang, Zhentao Qian, Wenhua Gu
{"title":"Radio-frequency identification (RFID) antenna directly printed by electrospraying","authors":"Haoyang Zhang, Zhentao Qian, Wenhua Gu","doi":"10.1109/IMWS-AMP.2016.7588371","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588371","url":null,"abstract":"This letter reports an electrospraying-based printing system developed with high-precision on-off control, which has the merits of anti-clog printing, maskless patterning, and precise control. Silver-colloid-based ink was used to directly print on glass or aluminum foil substrates just like a dip-pen. The minimum silver line width could reach 30μm, meanwhile the thickness and width of the silver line can be adjusted according to the customer demand. A specially-designed radio frequency identification (RFID) tag antenna was printed using this system. The printed RFID tag antenna was characterized and analyzed, which meets the basic requirements of practical applications.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130880434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of 3D-printed dielectric substrates with different infill for microwave applications 微波应用中不同填充物的3d打印介质基板的特性
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588330
E. Massoni, L. Silvestri, M. Bozzi, L. Perregrini, G. Alaimo, S. Marconi, F. Auricchio
{"title":"Characterization of 3D-printed dielectric substrates with different infill for microwave applications","authors":"E. Massoni, L. Silvestri, M. Bozzi, L. Perregrini, G. Alaimo, S. Marconi, F. Auricchio","doi":"10.1109/IMWS-AMP.2016.7588330","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588330","url":null,"abstract":"This paper presents the characterization of a 3D printed material based on Ninjaflex filament, through different techniques: the dielectric properties of the material are preliminary retrieved by a waveguide-based method, where a 3D-printed dielectric sample is inserted into a hollow metallic waveguide: this method allows for an accurate and narrow-band characterization. Subsequently, two microstrip lines with different length, realized on a 3D-printed substrate, are used for the broadband characterization in the frequency band from 2 GHz to 20 GHz. The effect of the infill percentage on the dielectric permittivity and loss tangent of the printed material are rigorously investigated and experimentally demonstrated, showing a large tunability when varying the infill from 25% to 100%. These results pave the road to the implementation of novel microwave components, based on the local variation of the dielectric permittivity, and suggest a technique to effectively reduce dielectric losses.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"42 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130573962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
A crosstalk avoidance method combining crosstalk avoidance code with shielding wire technique 一种将串扰避免码与屏蔽线技术相结合的串扰避免方法
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588317
Yalin Ran, Xiaole Cui, Xiaoyan Xu, Xiaoxin Cui, Yufeng Jin
{"title":"A crosstalk avoidance method combining crosstalk avoidance code with shielding wire technique","authors":"Yalin Ran, Xiaole Cui, Xiaoyan Xu, Xiaoxin Cui, Yufeng Jin","doi":"10.1109/IMWS-AMP.2016.7588317","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588317","url":null,"abstract":"Through-silicon vias (TSVs) play an important role as the vertical connections in three dimensional (3D) integrated circuit (IC). However, the 3D IC suffers from the increasing crosstalk noise between TSVs as the working frequency gets higher. The crosstalk in TSV arrays is more complicated than that of 2D IC because more aggressors have to be considered. This paper proposes a crosstalk avoidance method combining the crosstalk avoidance code (CAC) with the shielding wire technique by dividing the TSV array into some 3×3 sub-arrays. This method can suppress the crosstalk in TSV array below 4.5C level, which elevates the performance of 3D IC effectively.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131552688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Preparation and properties of MCT ceramics for RF and THz applications 射频和太赫兹用MCT陶瓷的制备和性能
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588456
Z. Xiong, Zhangzhao Weng, J. Huang, Bin Yang, R. Donnan, Haixue Yan, M. Reece
{"title":"Preparation and properties of MCT ceramics for RF and THz applications","authors":"Z. Xiong, Zhangzhao Weng, J. Huang, Bin Yang, R. Donnan, Haixue Yan, M. Reece","doi":"10.1109/IMWS-AMP.2016.7588456","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588456","url":null,"abstract":"Dielectric ceramics of 0.95MgTiO3-0.05CaTiO3 were prepared via a solid-state reaction method. It is evident that high permittivity and low loss are correlated to high density and high purity in the THz frequency domain. Best dielectric properties were obtained for samples sintered at 1260°C, which is attributable to their high density and high purity. However, the dielectric properties of the ceramics deteriorated when sintered above 1260°C, which is attributed to the significantly increased content of second phase produced by `over' sintering.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131697556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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