采用0.13µm SiGe BiCMOS的39dBm EIRP的d波段4×4 PA阵列

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588411

Bohua Cui, Yihu Li, Xiaodong Deng, Hailin Tang, Ruitao Wang, Haitao Liu, Y. Xiong

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引用次数: 1

摘要

提出了一种端火片上天线4×4功率放大器阵列。在PA阵列模块中，四个芯片垂直堆叠，并由金属支架隔开。在单个芯片中，集成了四个PA模块和一个1×4端火片上天线。采用0.13 μm SiGe BiCMOS工艺制作，实验fT和fMAX分别为210 GHz和260 GHz。4×4-PA-array模块在135GHz时实现了39 dBm的最大有效各向同性辐射功率(EIRP)。整个模块的物理尺寸为24×35×24 mm3，从6.5 V直流电源消耗19w。该模块可以很容易地扩展到任何M×N阵列，因此，进一步提高EIRP。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A D-band 4×4 PA array with 39dBm EIRP using 0.13-µm SiGe BiCMOS

A 4×4 power amplifier (PA) array with end-fire on chip antennas is presented in this paper. In the PA array module, four-chips are stacked vertically and spaced by the metal holders. In a single chip, four PA blocks with a 1×4 end-fire on-chip antenna are integrated. 0.13-μm SiGe BiCMOS process is used for fabrication with the experimental f_T and f_MAX of 210 and 260 GHz, respectively. The 4×4-PA-array module achieves a measured maximal effective isotropic radiated power (EIRP) of 39 dBm at 135GHz. The whole module has the physical dimensions of 24×35×24 mm³ and it consumes 19 W from a 6.5 V DC supply. This module can easily be scaled to any M×N array and hence, further improve the EIRP.

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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