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2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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A K-band low conversion loss single balanced mixer with GaAs Schottky barrier diode 一种带GaAs肖特基势垒二极管的k波段低转换损耗单平衡混频器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588448
Changjiang Yu, Zhuo Li, Minghua Zhao
{"title":"A K-band low conversion loss single balanced mixer with GaAs Schottky barrier diode","authors":"Changjiang Yu, Zhuo Li, Minghua Zhao","doi":"10.1109/IMWS-AMP.2016.7588448","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588448","url":null,"abstract":"With the rapid development of the wireless technology, mixer, which is the main part of microwave receiver, has been demanded to be much more smaller and better performance. A low conversion loss k-band single balanced mixer is presented in this paper. The radio frequency (RF) signal and local oscillator (LO) signal are applied to one pair of mutually isolated ports of the 180-degree hybrid ring, after calculating the embedding impedance of the diodes in harmonic balance method, an input matching network is designed, then the intermediate frequency (IF) will be taken to the output port through the compact low pass microstrip filter. The circuit is fabricated on the Rogers 3003 substrate with dielectric constant of 3, thickness of 0.254mm using two MAE1310 Schottky diodes.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126924908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A linear GaN power amplifier using novel transistor based analog predistortion method 一种基于新型晶体管模拟预失真方法的线性GaN功率放大器
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588314
Qi Cai, W. Che, Kaixue Ma
{"title":"A linear GaN power amplifier using novel transistor based analog predistortion method","authors":"Qi Cai, W. Che, Kaixue Ma","doi":"10.1109/IMWS-AMP.2016.7588314","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588314","url":null,"abstract":"This paper presents a novel transistor based analog predistortion method and its application in designing a linear GaN power amplifier (PA). The proposed analog predistorter (APD) can improve the third-order intermodulation distortion (IMD3) over the whole output frequency offset range. Furthermore, this structure can evidently simplify circuits design due to no vector modulator is involved. To demonstrate the new methodology, a 10W GaN power amplifier based on the proposed APD is implemented and tested at 2.4 GHz. The simulated results of the GaN PA with proposed APD shows that significant IMD3 improvement of better than 10 dB is achieved and the output 1dB gain compression point (P1dB) is increased from 35 dBm to 38.5 dBm under the measurement with two-tone drive signals.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115572008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
3-D printing of microwave components for 21st century applications 面向21世纪应用的微波组件3d打印
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588327
W. J. Otter, S. Lucyszyn
{"title":"3-D printing of microwave components for 21st century applications","authors":"W. J. Otter, S. Lucyszyn","doi":"10.1109/IMWS-AMP.2016.7588327","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588327","url":null,"abstract":"Additive manufacturing using 3-D printing is an emerging technology for the production of high performance microwave and terahertz components. Traditionally, these components are made by (micro-)machining. However, recent advances in rapid prototyping technology have led to its use in creating high performance and low weight RF components. In this review paper ten state-of-the-art exemplars are described, covering a wide variety of applications (absorbers, waveguides, antennas and lenses) operating over a broad range of frequencies, from 8 to 330 GHz.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"269 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116145608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Research on the atmospheric attenuation of THz wave at any heights based on fitting method 基于拟合方法的任意高度大气太赫兹波衰减研究
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588353
Xiaofan Yang, Peng Mei, Yonghu Zeng, Xianqi Lin, Liandong Wang
{"title":"Research on the atmospheric attenuation of THz wave at any heights based on fitting method","authors":"Xiaofan Yang, Peng Mei, Yonghu Zeng, Xianqi Lin, Liandong Wang","doi":"10.1109/IMWS-AMP.2016.7588353","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588353","url":null,"abstract":"The atmospheric attenuation of THz wave is closely related to the weather condition, region height and meteorological parameter. In this paper, the discrete data from China Meteorological Data Sharing Service System is employed and then different fitting functions are suggested to fit these discrete data of heights, air pressure, temperature and dew points. Take Wuhan (114.2°E, 30.86°N) for example, the atmospheric parameter at any heights is retrieved in detailed, based on which the atmospheric attenuation of THz wave at different heights is calculated according to recommendation given by the International Telecommunication Union Radio communication Sector.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129820849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A robust small-signal equivalent circuit model for AlGaN/GaN HEMTs up to 110 GHz 一种用于110 GHz AlGaN/GaN hemt的鲁棒小信号等效电路模型
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588419
Yonghao Jia, Yuehang Xu, Yunqiu Wu, R. Xu, Jianjun Zhou, Tangsheng Chen, Bing Zhang
{"title":"A robust small-signal equivalent circuit model for AlGaN/GaN HEMTs up to 110 GHz","authors":"Yonghao Jia, Yuehang Xu, Yunqiu Wu, R. Xu, Jianjun Zhou, Tangsheng Chen, Bing Zhang","doi":"10.1109/IMWS-AMP.2016.7588419","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588419","url":null,"abstract":"In this paper we present an accurate and robust small-signal equivalent circuit model(SSECM) for GaN/AlGaN HEMTs. To extend the operating frequency, a flexible equivalent circuit network for parasitic parameters is proposed. The equivalent circuit network is constructed by a number of (N) seriate equivalent resist, inductance and capacitance (Rn-Ln-Cn), which accounts for distribution effects of gate and drain feeding line. The number of seriate R-L-C can be chosen by the maximum operating frequency flexibly. As a result, we can get an accurate SSECM on certain frequency range with the minimum cost of extraction procedure and time. The proposed parasitic model has been added in the conventional SSECM and a GaN HEMT with gate length 0.1μm and 2×100μm is used for validation. The results show that the SSECM with N=2 and N=3 can well describe the scattering parameters with maximum frequency up to 66GHz and 110 GHz, respectively.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128349090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect 考虑综合热效应的AlGaN/GaN hemt大信号改进模型
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588418
M. Zhang, W. Che, K. Ma
{"title":"An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect","authors":"M. Zhang, W. Che, K. Ma","doi":"10.1109/IMWS-AMP.2016.7588418","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588418","url":null,"abstract":"Large signal modeling for the GaN devices are crucial for their applications. An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect is proposed in this work. To obtain accurate description of the thermal effect, the influence of the temperature on all the Angelov empirical model parameters like extrinsic resistance is studied. These parameters counting the thermal effects for the large signal model are modeled based on the measurement data from 0.25-μm GaN device. The comparison of the simulation and measurement results show excellent agreements under different temperature conditions.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129898277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Enhancement of Fano resonance using modified trilayer fishnet metamaterials 改良三层鱼网超材料增强法诺共振
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588376
Libang Mao, T. Cao
{"title":"Enhancement of Fano resonance using modified trilayer fishnet metamaterials","authors":"Libang Mao, T. Cao","doi":"10.1109/IMWS-AMP.2016.7588376","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588376","url":null,"abstract":"Fano resonance (FR) is routinely observed in three dimensional(3D) symmetric metamaterials(MMs) consisting of elliptical nanoholes array (ENA) embedding through metal/dielectric/metal (MDM) multilayers. It is shown theoretically that a square periodic ENA perforating through MDM layers produces a FR response in the near infrared (NIR) regime. This FR response is attributed to the interplay between the bright modes and dark modes, where the bright modes originate from the electric resonance(localized surface plasmon resonance) caused by the ENA and the dark modes are due to the magnetic resonance(inductive-capacitive resonance) induced by the MDM multilayers. Notably, one can achieve a narrower FR when the elliptical nanoholes occupy the sites of a rectangular lattice, owing to the interaction of the magnetic resonances with the enhanced electric resonances. Moreover, a higher varying degree of the lattice constant along the horizontal direction allows for a FR with a higher value of the quality factor and the tuning of the amplitude and the resonant frequency of the transparency window. Such a FR created by the interference among the magnetic and electric dipolar resonances opens up an alternative way of forming a sharp FR in the symmetric multilayer MMs, and could be exploited for sensing.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121063086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A polarization-agile aperture-coupled patch antenna using quad-mode reconfigurable feeding network 一种基于四模可重构馈电网络的极化敏捷孔径耦合贴片天线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588377
Hucheng Sun, Sheng Sun
{"title":"A polarization-agile aperture-coupled patch antenna using quad-mode reconfigurable feeding network","authors":"Hucheng Sun, Sheng Sun","doi":"10.1109/IMWS-AMP.2016.7588377","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588377","url":null,"abstract":"This paper presents a new polarization-agile antenna that can switch between four various polarizations. The proposed antenna is based on a quad-mode reconfigurable feeding network with four dynamic transmission modes. At each mode, the measured insertion loss of the feeding network is less than 0.8 dB at the target frequency. Meanwhile, a dual-polarized aperture-coupled patch antenna with good isolation and the same gain between two ports is designed for the realization of the polarization diversity. The feeding network can be integrated into the dual-polarized antenna to form the polarization-agile antenna. By switching the PIN diodes on the feeding network, the proposed antenna can exhibit two orthogonal linear polarizations and two orthogonal circular polarizations. Measured results of the polarization-agile antenna are shown in detail, which verify its performance.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121324887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design and analysis of micro-machined folded waveguide slow-wave structure for 220 GHz application 220 GHz微加工折叠波导慢波结构设计与分析
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588384
Xingwang Bian, M. Miao, Zhensong Li
{"title":"Design and analysis of micro-machined folded waveguide slow-wave structure for 220 GHz application","authors":"Xingwang Bian, M. Miao, Zhensong Li","doi":"10.1109/IMWS-AMP.2016.7588384","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588384","url":null,"abstract":"Folded waveguide is a promising structure for THz travelling wave tube (TWT) application. In this paper, a folded waveguide slow-wave structure of 220GHz TWT is designed and simulated using CST Microwave Studio and Particle Studio. Interaction impedance and dispersion relation vs. frequency are evaluated. The relationship between gain and parameters such as beam current, electron's emitting angle, energy spread, magnetic flux density and input power, are discussed. Simulations of a 60 periods folded waveguide circuit show that the gain is 17.4dB at 220GHz when the beam voltage is 18KV and beam current is 10mA.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134282839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A novel compact ultra-wideband metamaterial-based microstrip antenna 一种新型紧凑型超宽带超材料微带天线
2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI: 10.1109/IMWS-AMP.2016.7588421
Yuanlong Dai, B. Yuan, Xiao Hong Zhang, X. Dai, G. Luo
{"title":"A novel compact ultra-wideband metamaterial-based microstrip antenna","authors":"Yuanlong Dai, B. Yuan, Xiao Hong Zhang, X. Dai, G. Luo","doi":"10.1109/IMWS-AMP.2016.7588421","DOIUrl":"https://doi.org/10.1109/IMWS-AMP.2016.7588421","url":null,"abstract":"A novel compact Ultra-wideband (UWB) microstrip patch antenna using planar metamaterial structures is proposed. The metamaterial microstrip antenna has two layers consists of a meshed top patch and a patterned ground plane. The inductances and capacitances coupled due to the ground plane and patterned radiating patch leads to the left handed behavior of the metamaterial. The proposed antenna which designed on the low cost FR4 substrate has compact size 28×32 mm2 with height 0.794mm. The impedance bandwidth operates from 3.3 to 12 GHz for S-parameter of less than -10 dB level. The results obtained from the simulation studies shows that the antenna has good radiation characteristics for the UWB applications.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131713981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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