考虑综合热效应的AlGaN/GaN hemt大信号改进模型

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588418

M. Zhang, W. Che, K. Ma

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引用次数: 2

摘要

GaN器件的大信号建模对其应用至关重要。本文提出了一种包含综合热效应的AlGaN/GaN hemt大信号改进模型。为了准确地描述热效应，研究了温度对Angelov经验模型各参数的影响。基于0.25-μm GaN器件的测量数据，对大信号模型的热效应参数进行了建模。仿真结果与实测结果比较表明，在不同温度条件下，仿真结果与实测结果吻合良好。

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An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect

Large signal modeling for the GaN devices are crucial for their applications. An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect is proposed in this work. To obtain accurate description of the thermal effect, the influence of the temperature on all the Angelov empirical model parameters like extrinsic resistance is studied. These parameters counting the thermal effects for the large signal model are modeled based on the measurement data from 0.25-μm GaN device. The comparison of the simulation and measurement results show excellent agreements under different temperature conditions.

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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