A ultra-wideband empirical large-signal model for AlGaAs/GaAs HEMTs

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588313

Yonghao Jia, Yuehang Xu, Xi Chen, Changsi Wang

引用次数: 3

Abstract

An accurate large-signal GaAs HEMT modeling is very important for microwave and millimeter wave power MMIC amplifier design. This paper presents a complete GaAs HEMT model suitable for ultra-wide band application. The model is realized with an improved drain current (Ids) formulation with self-heating and charge trapping modification. This large-signal GaAs HEMT modeling is validated for a wideband frequency from 12GHz to 40GHz and can predict fundamental output power, gain, and power added efficiency accurately.

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AlGaAs/GaAs hemt的超宽带经验大信号模型

精确的大信号GaAs HEMT建模对于微波和毫米波功率MMIC放大器的设计非常重要。本文提出了一种适用于超宽带应用的完整的GaAs HEMT模型。该模型采用改进的漏极电流(Ids)公式实现，并对漏极电流进行了自加热和电荷捕获修正。该大信号GaAs HEMT模型在12GHz至40GHz的宽带频率范围内进行了验证，可以准确预测基本输出功率、增益和功率附加效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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