{"title":"Low power injection-locked frequency divider using native MOS","authors":"S. Jang, W. Lai, Wei-Te Liu, C. Hsue","doi":"10.1109/IMWS-AMP.2016.7588415","DOIUrl":null,"url":null,"abstract":"This paper presents a 0.55V and low power divided-by-2 injection-locked frequency divider (ILFD) using native nMOS as the injection MOSFET with threshold voltage nearly equal to 0. At the injection power of 0dBm, the measured locking range is from 6.1 to 7.45 GHz. Excluding output buffers the ILFD consumes the power 0.69 mW under a standard supply of 0.55 V.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2016.7588415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents a 0.55V and low power divided-by-2 injection-locked frequency divider (ILFD) using native nMOS as the injection MOSFET with threshold voltage nearly equal to 0. At the injection power of 0dBm, the measured locking range is from 6.1 to 7.45 GHz. Excluding output buffers the ILFD consumes the power 0.69 mW under a standard supply of 0.55 V.