采用原生MOS的低功率注入锁定分频器

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588415

S. Jang, W. Lai, Wei-Te Liu, C. Hsue

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引用次数: 5

摘要

本文提出了一种0.55V、低功率除以2的注入锁定分频器(ILFD)，采用原生nMOS作为注入MOSFET，阈值电压接近于0。在注入功率为0dBm时，测量到的锁定范围为6.1 ~ 7.45 GHz。不包括输出缓冲器，在0.55 V的标准电源下，ILFD消耗的功率为0.69 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low power injection-locked frequency divider using native MOS

This paper presents a 0.55V and low power divided-by-2 injection-locked frequency divider (ILFD) using native nMOS as the injection MOSFET with threshold voltage nearly equal to 0. At the injection power of 0dBm, the measured locking range is from 6.1 to 7.45 GHz. Excluding output buffers the ILFD consumes the power 0.69 mW under a standard supply of 0.55 V.

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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