射频和太赫兹用MCT陶瓷的制备和性能

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588456

Z. Xiong, Zhangzhao Weng, J. Huang, Bin Yang, R. Donnan, Haixue Yan, M. Reece

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摘要

采用固相反应法制备了0.95 mgtio3 -0.05 5catio3介电陶瓷。在太赫兹频域中，高介电常数和低损耗与高密度和高纯度密切相关。在1260℃下烧结的样品具有最佳的介电性能，这主要归因于其高密度和高纯度。然而，当烧结温度高于1260°C时，陶瓷的介电性能下降，这是由于“过”烧结产生的第二相含量显著增加。

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Preparation and properties of MCT ceramics for RF and THz applications

Dielectric ceramics of 0.95MgTiO3-0.05CaTiO3 were prepared via a solid-state reaction method. It is evident that high permittivity and low loss are correlated to high density and high purity in the THz frequency domain. Best dielectric properties were obtained for samples sintered at 1260°C, which is attributable to their high density and high purity. However, the dielectric properties of the ceramics deteriorated when sintered above 1260°C, which is attributed to the significantly increased content of second phase produced by `over' sintering.

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2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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