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IEEE MTT-S International Microwave Symposium Digest, 2005.最新文献

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InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth 带宽超过80ghz的InP/InGaAs-DHBT分布式放大器mmic
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517005
K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann
{"title":"InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth","authors":"K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann","doi":"10.1109/MWSYM.2005.1517005","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517005","url":null,"abstract":"Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs double heterojunction bipolar transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-parameters, is flat up to 80 GHz.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"141 1","pages":"3 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73640517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An efficient optimization design of a manifold multiplexer using an accurate equivalent circuit model of coupling irises of channel filters 利用通道滤波器耦合虹膜的精确等效电路模型对流形多路复用器进行了有效的优化设计
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516907
M. Uhm, Juseop Lee, Jong Heung Park, J. P. Kim
{"title":"An efficient optimization design of a manifold multiplexer using an accurate equivalent circuit model of coupling irises of channel filters","authors":"M. Uhm, Juseop Lee, Jong Heung Park, J. P. Kim","doi":"10.1109/MWSYM.2005.1516907","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516907","url":null,"abstract":"In this paper, an efficient optimization design method for a manifold multiplexer is proposed. For an efficient optimization, equivalent circuit models for coupling irises of channel filters are presented. Equivalent circuit models are obtained from the results of electromagnetic field (EM) analysis. To validate the presented optimization design method, a manifold multiplexer for Ka-band satellite applications is designed and realized. The good agreement between theoretical result and measured one is shown.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"23 1","pages":"1263-1266"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74121873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f/sub T//f/sub MAX/ of 7/5.2 GHz h - sic射频双极结晶体管在半绝缘衬底上的首次演示，f/sub T//f/sub MAX/为7/5.2 GHz
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517145
F. Zhao, I. Perez-Wurfl, Chih-Fang Huang, J. Torvik, B. Zeghbroeck
{"title":"First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f/sub T//f/sub MAX/ of 7/5.2 GHz","authors":"F. Zhao, I. Perez-Wurfl, Chih-Fang Huang, J. Torvik, B. Zeghbroeck","doi":"10.1109/MWSYM.2005.1517145","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517145","url":null,"abstract":"4H-SiC RF BJTs on a semi-insulating (>10/sup 5/ /spl Omega/-cm) substrate were designed and fabricated for the first time using an n-p-n triple mesa-etch and interdigitated emitter-base finger design. On-wafer small signal S-parameter measurements were performed on a 4-finger device with 3 /spl mu/m emitter stripe width and 150 /spl mu/m finger length. Both, the current gain and unilateral power gain, were calculated from the measured S-parameters, yielding an f/sub T/ of 7 GHz and an f/sub MAX/ of 5.2 GHz biased in common-emitter configuration at J/sub E/ = 10.6 kA/cm/sup 2/ and V/sub CE/ = 20 V. These are the highest RF figures of merit reported to date for any SiC bipolar transistor. The calculated maximum available power gain (G/sub MAX/) is 18.6-dB at 500 MHz and 12.4-dB at 1 GHz, demonstrating the potential of 4H-SiC BJTs for both UHF and L-band applications.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"311 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79120815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Accurate design of HBT VCOs with flicker noise up-conversion minimization, using an advanced low-frequency cyclostationary noise model 利用先进的低频循环平稳噪声模型，精确设计了闪烁噪声上转换最小化的HBT压控振荡器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516984
C. Gourdon, J. Nallatamby, D. Baglieri, M. Prigent, M. Camiade, J. Obregon
{"title":"Accurate design of HBT VCOs with flicker noise up-conversion minimization, using an advanced low-frequency cyclostationary noise model","authors":"C. Gourdon, J. Nallatamby, D. Baglieri, M. Prigent, M. Camiade, J. Obregon","doi":"10.1109/MWSYM.2005.1516984","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516984","url":null,"abstract":"We present a scalable cyclostationary low frequency noise model of GaInP/GaAs HBT, oriented to oscillator circuits CAD, and its implementation in commercial simulators. In order to verify the validity of the scalable noise model, several MMIC VCOs have been designed in the microwave range from 2GHz up to 24 GHz and processed at UMS foundry. Experimental results have been compared with the predicted one showing an excellent agreement without any retrofitting. They validate the proposed low frequency noise model for multifinger HBTs. To our knowledge it is the first time that VCOs are designed using non linear transistor models including LF cyclostationary noise sources.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"9 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84284912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Enhanced PEEC modeling for embedded RF passives of irregular shapes 不规则形状嵌入式射频无源的增强PEEC建模
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517064
Mengna Hu, Jie Wang, Ke-Li Wu
{"title":"Enhanced PEEC modeling for embedded RF passives of irregular shapes","authors":"Mengna Hu, Jie Wang, Ke-Li Wu","doi":"10.1109/MWSYM.2005.1517064","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517064","url":null,"abstract":"This paper presents an enhanced partial element equivalent circuit (PEEC) for modeling embedded multi-layered passives of irregular shapes to meet with the increase of complexity of the electrical system. The proposed PEEC model consists of the improvement of the meshing scheme to model irregular geometries instinctively and also the derivation of a new set of numerical formulations to get the partial inductance and capacitance. Two examples, including a circular spiral inductor and a high-pass filter, have been simulated by this method and the commercial software, high frequency structure simulator (HFSS). The agreement between these two simulation results proves the validity and accuracy of this generalized PEEC model.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"10 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84485641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Behavioral modeling of power amplifiers using fully recurrent neural networks 使用全循环神经网络的功率放大器行为建模
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517131
D. Luongvinh, Y. Kwon
{"title":"Behavioral modeling of power amplifiers using fully recurrent neural networks","authors":"D. Luongvinh, Y. Kwon","doi":"10.1109/MWSYM.2005.1517131","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517131","url":null,"abstract":"This paper describes the first implementation of fully recurrent neural networks (FRNN) for behavioral modeling of power amplifiers. The proposed recurrent neural network model utilizes global feedbacks and full interconnections between neurons in hidden layers. The model has successfully been trained with W-CDMA signal. Then it is tested with not only W-CDMA signal but CDMA-1S95 and 2-tone signals as well. Good agreements between measured and modeled results have been achieved.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"18 1","pages":"4 pp.-"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84804050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Radio-on-fiber downlink transmission systems based on optically controlled InP/InGaAs HPT oscillators 基于光控InP/InGaAs HPT振荡器的光纤上无线电下行传输系统
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516507
Chang-Soon Choi, Jun-Hyuk Seo, W. Choi, H. Kamitsuna, M. Ida, K. Kurishima
{"title":"Radio-on-fiber downlink transmission systems based on optically controlled InP/InGaAs HPT oscillators","authors":"Chang-Soon Choi, Jun-Hyuk Seo, W. Choi, H. Kamitsuna, M. Ida, K. Kurishima","doi":"10.1109/MWSYM.2005.1516507","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516507","url":null,"abstract":"We present a new antenna base station architecture for millimeter-wave radio-on-fiber downlink transmission systems. The architecture is made up of a single InP HPT oscillator, in which InP HPT device simultaneously performs the optically injection-locked oscillation and harmonic optoelectronic mixing. With this, we successfully demonstrate 16QAM radio-on-fiber downlink transmission in 30GHz band.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"60 1","pages":"11-14"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82137540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 1 GHz continuous-time sigma-delta A/D converter in 90 nm standard CMOS 1 GHz连续时间σ - δ A/D转换器在90纳米标准CMOS
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516914
R. Schoofs, M. Steyaert, W. Sansen
{"title":"A 1 GHz continuous-time sigma-delta A/D converter in 90 nm standard CMOS","authors":"R. Schoofs, M. Steyaert, W. Sansen","doi":"10.1109/MWSYM.2005.1516914","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516914","url":null,"abstract":"A 1 GHz continuous-time sigma-delta A/D modulator is presented. It is designed in a standard 90 nm CMOS technology. The 1-bit modulator achieves an accuracy of 10 bits in a signal bandwidth of 8 MHz. This paper focuses on the challenges the designer faces when the sampling speed increases and the supply voltage lowers. It is shown that a G m C architecture is the most power efficient filter implementation for broadband conversion. Here, the power consumption is determined by thermal noise requirements. Finally, the timing of the feedback pulse is controlled. This ensures an improved stability of the 1 GHz modulator.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"1 1","pages":"1287-1290"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79618362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Design and Characterization of 180 GHz Filters in Photoimageable Thick-Film Technology 光可成像厚膜技术中180ghz滤波器的设计与表征
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516626
D. Stephens, P. Young, I. Robertson
{"title":"Design and Characterization of 180 GHz Filters in Photoimageable Thick-Film Technology","authors":"D. Stephens, P. Young, I. Robertson","doi":"10.1109/MWSYM.2005.1516626","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516626","url":null,"abstract":"The design and performance of 180 GHz substrate integrated waveguide filters is presented. It is shown that photoimageable thick film technology can achieve the precise dimensional control needed for design at G-band. TRL calibration standards are fabricated in the substrate integrated waveguide medium itself and excellent results are obtained for the 140–200 GHz frequency range. 0.1 and 0.01dB ripple filters are designed and fabricated, with 8 and 6.2% relative bandwidths. The measured results show excellent agreement with electromagnetic simulations.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"219 1","pages":"451-454"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79795402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
High-Q dielectric resonator with operated slit (Tunability, Thermal Stability, Film Measurements) 带操作狭缝的高q介电谐振器(可调性、热稳定性、薄膜测量)
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516857
A. Eremenko, D. Shmigin, V. Pashkov, V. Molchanov, Y. Poplavko
{"title":"High-Q dielectric resonator with operated slit (Tunability, Thermal Stability, Film Measurements)","authors":"A. Eremenko, D. Shmigin, V. Pashkov, V. Molchanov, Y. Poplavko","doi":"10.1109/MWSYM.2005.1516857","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516857","url":null,"abstract":"Split dielectric resonator (SDR) of H 01δ type with a narrow slit located athwart to electric field is presented as: (1) electro-mechanically tunable DR utilizing fast piezo-actuator; (2) high-Q resonant system with thermal self-stabilization of its resonant frequency using thermal expansion for compensation; and (3) measurement device to study dielectric film parameters, including their temperature characteristics. Proposed SDR theoretical analysis based on the combination of partial regions methods and collocations, shows agreement with experimental results.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":"46 27 1","pages":"1075-1078"},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80520230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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