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IEEE MTT-S International Microwave Symposium Digest, 2005.最新文献

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A Multigrid-Enhanced Iterative ADI Method 一种多网格增强迭代ADI方法
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516559
Shumin Wang, Ji Chen
{"title":"A Multigrid-Enhanced Iterative ADI Method","authors":"Shumin Wang, Ji Chen","doi":"10.1109/MWSYM.2005.1516559","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516559","url":null,"abstract":"We propose a multigrid Alternating-Direction Implicit (ADI) method for solving Maxwell's equations in this paper. This method is based on the interpretation of the ADI method as an iterative solver of the Crank-Nicolson (CN) scheme. By introducing a special solving procedure for the residual equation within the ADI framework, multigrid schemes are incorporated into the iterative ADI method. The accuracy and efficiency of the proposed multigrid ADI method are further demonstrated by numerical examples.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75212069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel integrated coaxial line to cylindrical waveguide directive couplers in pipelines for process monitoring applications 用于过程监控应用的管道中新型集成同轴线到圆柱波导指令耦合器
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516892
A. Penirschke, J. Freese, J. Biebel, B. Allenberg, R. Jakoby
{"title":"Novel integrated coaxial line to cylindrical waveguide directive couplers in pipelines for process monitoring applications","authors":"A. Penirschke, J. Freese, J. Biebel, B. Allenberg, R. Jakoby","doi":"10.1109/MWSYM.2005.1516892","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516892","url":null,"abstract":"This paper presents a novel coaxial line to circular cylindrical waveguide directive coupler, using a resonant configuration of two integrated coaxial-fed microstrip patches opposite arranged in a measurement pipeline, this configuration a directivity of more than 4 dB at 5.7 GHz can be achieved without disturbing the cross-section of the pipeline. The insertion loss of the proposed coupler is low and hence about -1 dB of the input signal is transmitted into the desired direction of the circular waveguide which is a gain of 2 dB compared to a conventional E-field probe. Similar to commercial available mass flow meters, two of these couplers, at a distance of 0.4 m in the measurement section, form a mass flow sensor (Penirschke et al., 2004).","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75931474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Fabrication and measurements using ultra-tall near-field coaxial tips 使用超高近场同轴尖端制造和测量
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517174
Yaqiang Wang, C. A. Paulson, Guoqing Ning, D. W. van der Weide
{"title":"Fabrication and measurements using ultra-tall near-field coaxial tips","authors":"Yaqiang Wang, C. A. Paulson, Guoqing Ning, D. W. van der Weide","doi":"10.1109/MWSYM.2005.1517174","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517174","url":null,"abstract":"We present a new method for microfabrication of coaxial silicon tips with heights >50 /spl mu/m. The coaxial silicon tip acts as an electrically small antenna. Microwave measurements using a microfabricated coaxial tip chip are performed with a network analyzer HP8753D and an atomic force microscope (AFM). Scanning near-field microwave microscopy (SNMM) using the ultra-tall coaxial tip is demonstrated with a commercial AFM silicon probe in noncontact mode as a sample.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74823358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Equivalent circuit modeling of symmetric composite right/left-handed coplanar waveguides 对称复合左右共面波导等效电路建模
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517123
Shau-Gang Mao, Min-Sou Wu
{"title":"Equivalent circuit modeling of symmetric composite right/left-handed coplanar waveguides","authors":"Shau-Gang Mao, Min-Sou Wu","doi":"10.1109/MWSYM.2005.1517123","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517123","url":null,"abstract":"The composite right/left-handed (CRLH) coplanar waveguide (CPW) consisting of the series interdigital capacitor (IDC) and the shunt meandering short-circuited stub inductor (SSI) in symmetric configuration is investigated theoretically and experimentally. To characterize this structure, the equivalent circuit model composed of inductances, capacitances, and resistances to represent the left-handed (LH), right-handed (RH), and lossy characteristics is established. These equivalent circuit elements are extracted simultaneously from S-parameters based on effective medium theory. The extraction method is to examine both the CRLH microstrip line and the CRLH CPW to illustrate the versatility of the formulation. The application of the CRLH CPW in the compact short circuited stub is presented to highlight the unique feature of the CRLH CPW. Compared to the conventional CPW short-circuited stub, the 51.4% length reduction of the case using the CRLH CPW is achieved at 5 GHz.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72856639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Q enhancement with cross-connected coplanar waveguides in thick dual damascene Cu 厚双大马士革铜中交叉连接共面波导的Q增强
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517081
W. van Noort, L. Tiemeijer, C. Detcheverry, G. Verheijden, P. Bancken, R. Daamen, R. Havens
{"title":"Q enhancement with cross-connected coplanar waveguides in thick dual damascene Cu","authors":"W. van Noort, L. Tiemeijer, C. Detcheverry, G. Verheijden, P. Bancken, R. Daamen, R. Havens","doi":"10.1109/MWSYM.2005.1517081","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517081","url":null,"abstract":"A 2 times 2 /spl mu/m, dual damascene, dual metal Cu in SiLK/spl trade/ process on 200 mm high-resistivity silicon wafers is presented. The lines and spaces in both metal layers can be patterned to submicron dimensions. The extremely low specific contact resistance of the vias, typical for dual damascene Cu, is utilized to make coplanar waveguides, patterned specifically to suppress skin and proximity effects. RF measurements from 1 to 100 GHz show an increase in Q factor up to 30% in the 1 to 15 GHz frequency interval for the patterned lines.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73004767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The high frequency and power performance of SiGe HBTs with SIC structure at cryogenic temperature 低温下SIC结构SiGe HBTs的高频性能和功率性能
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517199
M. Hsieh, K. Liang, Y. Chan, C.Y. Lee, G.J. Chen, D. Tang
{"title":"The high frequency and power performance of SiGe HBTs with SIC structure at cryogenic temperature","authors":"M. Hsieh, K. Liang, Y. Chan, C.Y. Lee, G.J. Chen, D. Tang","doi":"10.1109/MWSYM.2005.1517199","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517199","url":null,"abstract":"The high-frequency behavior and power capability of SiGe HBTs with selectively implanted collector structure have been measured at temperature between 77 and 350 K. Detailed analyses of temperature dependence on dc, high-frequency parameters, and power performances are presented. An HBT transit-time analysis is also described to find out the factors causing the increase in cutoff frequency (f/sub T/) at low temperature operation of different functionality of devices. In addition, the power capability of enhanced-breakdown device at liquid-nitrogen temperature is severely degraded.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73006156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Extending static models by using time series to identify the dynamical behavior 通过使用时间序列来扩展静态模型以识别动态行为
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517129
J. Wood, J. Horn, D. Root
{"title":"Extending static models by using time series to identify the dynamical behavior","authors":"J. Wood, J. Horn, D. Root","doi":"10.1109/MWSYM.2005.1517129","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517129","url":null,"abstract":"We use a simple, static model of an amplifier and augment the model by adding a nonlinear dynamical part in which the dynamics are identified using principles of time series analysis. The static part of the model is a polynomial nonlinearity in the input voltage, and is implemented using a built-in system amplifier model in ADS. The dynamic nonlinear part of the model is implemented using an artificial neural network. This new model is fast to simulate and extends the simple, single frequency system amplifier model to cover a wide bandwidth, maintaining good large-signal predictions.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73253124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low power 23-GHz and 27-GHz distributed cascode amplifiers in a standard 130nm SOI CMOS process 低功耗23-GHz和27-GHz分布式级联放大器在标准的130nm SOI CMOS工艺
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517200
C. Pavageau, A. Siligaris, L. Picheta, F. Danneville, M. Si Moussa, J. Raskin, D. Vanhoenaker-Janvier, J. Russat, N. Fel
{"title":"Low power 23-GHz and 27-GHz distributed cascode amplifiers in a standard 130nm SOI CMOS process","authors":"C. Pavageau, A. Siligaris, L. Picheta, F. Danneville, M. Si Moussa, J. Raskin, D. Vanhoenaker-Janvier, J. Russat, N. Fel","doi":"10.1109/MWSYM.2005.1517200","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517200","url":null,"abstract":"Two fully integrated distributed amplifiers (DA) were designed using a standard 130 nm partially-depleted silicon-on-insulator CMOS process. They make use of either body-contacted (BC) or floating-body (FB) MOSFETs, and microstrip lines. The BC-DA has a 5.4 dB gain and a unity-gain bandwidth of 23 GHz whereas the FB-DA has a 6.8 dB gain and a unity-gain bandwidth of 27 GHz. The measured output power at 1 dB compression is 5 dBm at 5 GHz and the noise figure is 6.5-7.5 dB over 6-18 GHz for both DAs. Power consumption is 58 mW at 1.4 V.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74529749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Large signal HBT model with measurement based charge formulations 大信号HBT模型与测量为基础的收费公式
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1516883
S. Cheon, Jiyoun Lim, Deok-Soo Park, Jaewoo Park
{"title":"Large signal HBT model with measurement based charge formulations","authors":"S. Cheon, Jiyoun Lim, Deok-Soo Park, Jaewoo Park","doi":"10.1109/MWSYM.2005.1516883","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516883","url":null,"abstract":"A new large signal HBT model is proposed and experimentally evaluated, which contains measurement based diffusion charge and analytical depletion capacitance formulations. In order to account for the complicated dependency of diffusion charge on bias, transit times at various bias points are extracted from measured data and contour-integrated. Using spline functions in the interpolation of transit times, modeled RF characteristics are continuous and smooth up to 3rd order derivative with respect to collector current in the wide range of bias. Base-emitter depletion capacitance C be is implemented considering GaAs emitter capping layer as well as InGaP emitter layer. It is shown that the new formulations of diffusion charge and depletion capacitor improves the accuracy of the large-signal model. Simulation results are verified with comparison to measured S-parameter and gain characteristics in the whole bias range.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74319233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth 带宽超过80ghz的InP/InGaAs-DHBT分布式放大器mmic
IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI: 10.1109/MWSYM.2005.1517005
K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann
{"title":"InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth","authors":"K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann","doi":"10.1109/MWSYM.2005.1517005","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517005","url":null,"abstract":"Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs double heterojunction bipolar transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-parameters, is flat up to 80 GHz.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73640517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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