InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1517005

K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann

引用次数: 5

Abstract

Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs double heterojunction bipolar transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-parameters, is flat up to 80 GHz.

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带宽超过80ghz的InP/InGaAs-DHBT分布式放大器mmic

采用自主研发的InP/InGaAs双异质结双极晶体管(DHBT)技术实现了具有超大带宽的分布式放大器mmic。给出了两种放大器的选择。该放大器的3db带宽分别为85 GHz和101 GHz，增益为10.5 dB和9.5 dB。两者在整个带宽范围内都具有出色的输入匹配，在85ghz范围内的输出匹配优于-10 dB。根据测量的s参数计算的群延迟在80 GHz以内是平坦的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE MTT-S International Microwave Symposium Digest, 2005.

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