K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann
{"title":"带宽超过80ghz的InP/InGaAs-DHBT分布式放大器mmic","authors":"K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann","doi":"10.1109/MWSYM.2005.1517005","DOIUrl":null,"url":null,"abstract":"Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs double heterojunction bipolar transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-parameters, is flat up to 80 GHz.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"InP/InGaAs-DHBT distributed amplifier MMICs exceeding 80 GHz bandwidth\",\"authors\":\"K. Schneider, R. Driad, R. Makon, A. Tessmann, R. Aidam, R. Quay, M. Schlechtweg, G. Weimann\",\"doi\":\"10.1109/MWSYM.2005.1517005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs double heterojunction bipolar transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-parameters, is flat up to 80 GHz.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2005.1517005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2005.1517005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs double heterojunction bipolar transistor (DHBT) technology. A choice of two amplifiers is presented. The amplifiers achieve a 3-dB bandwidth of 85 GHz and 101 GHz and a gain of 10.5 dB and 9.5 dB, respectively. Both show an excellent input matching over the entire bandwidth and an output matching of better than -10 dB up to 85 GHz. The group delay, which is calculated from measured S-parameters, is flat up to 80 GHz.
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