The high frequency and power performance of SiGe HBTs with SIC structure at cryogenic temperature

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1517199

M. Hsieh, K. Liang, Y. Chan, C.Y. Lee, G.J. Chen, D. Tang

引用次数: 5

Abstract

The high-frequency behavior and power capability of SiGe HBTs with selectively implanted collector structure have been measured at temperature between 77 and 350 K. Detailed analyses of temperature dependence on dc, high-frequency parameters, and power performances are presented. An HBT transit-time analysis is also described to find out the factors causing the increase in cutoff frequency (f/sub T/) at low temperature operation of different functionality of devices. In addition, the power capability of enhanced-breakdown device at liquid-nitrogen temperature is severely degraded.

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低温下SIC结构SiGe HBTs的高频性能和功率性能

在77 ~ 350 K的温度范围内，测量了选择性植入集电极结构的SiGe HBTs的高频行为和功率性能。详细分析了温度对直流、高频参数和功率性能的依赖关系。本文还对HBT过渡时间进行了分析，以找出在不同器件功能的低温运行下导致截止频率(f/sub T/)增加的因素。此外，强化击穿装置在液氮温度下的功率能力严重下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE MTT-S International Microwave Symposium Digest, 2005.

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