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58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)最新文献

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GaN-based MESFETs and DC-MOSFETs 基于gan的mesfet和dc - mosfet
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877081
R. Gaska, M.A. Khan, X. Hu, G. Simin, J. Yang, J. Deng, S. Rumyantsev, M. Shur
{"title":"GaN-based MESFETs and DC-MOSFETs","authors":"R. Gaska, M.A. Khan, X. Hu, G. Simin, J. Yang, J. Deng, S. Rumyantsev, M. Shur","doi":"10.1109/DRC.2000.877081","DOIUrl":"https://doi.org/10.1109/DRC.2000.877081","url":null,"abstract":"We present experimental results, which show that GaN MESFET and MOSFET technology can demonstrate the performance comparable to that of GaN-AlGaN HFETs for highly doped narrow channel devices. The device structures were grown by low-pressure MOCVD over [0001] sapphire substrates. PECVD 10-15 nm thick SiO/sub 2/ was used as an insulating layer for doped channel GaN-based MOSFETs. The threshold voltage for MESFETs and DC-MOSFETs ranged from 1.5 V to 10 V, and from 4 V to 20 V, respectively. The maximum drain currents up to 300 mA/mm and transconductances up to 60 mS/mm were measured for 100 /spl mu/m wide devices. The Schottky gate turn-on voltage for MESFET devices was close to 1 V, which is approximately two times lower than for AlGaN-GaN HEMTs. The gate leakage current in DC-MOSFETs was more than three orders of magnitude lower than in MESFETs. The long-channel GaN MESFETs that we fabricated exhibited a cut-off frequency-gate length product of 11.6 GHz-/spl mu/m. This number is comparable with the 16.4 GHz-/spl mu/m value demonstrated recently for AlGaN-GaN MOS-HFETs on SiC substrates and 18.2 GHz-/spl mu/m demonstrated for AlGaN-GaN HFETs on sapphire substrates. The cut-off frequency improves with increasing channel doping. Experimental results and model predictions show that GaN MESFETs and GaN DC-MOSFETs might find applications for power devices in X-band and above.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124728163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Lifetime control by low energy electron irradiation and hydrogen annealing [Si power diodes] 低能电子辐照和氢退火的寿命控制[Si功率二极管]
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877089
J. Jo, J. Park, H.J. Kim, S.H. Lee, Z. Shen, Y. Nishihara
{"title":"Lifetime control by low energy electron irradiation and hydrogen annealing [Si power diodes]","authors":"J. Jo, J. Park, H.J. Kim, S.H. Lee, Z. Shen, Y. Nishihara","doi":"10.1109/DRC.2000.877089","DOIUrl":"https://doi.org/10.1109/DRC.2000.877089","url":null,"abstract":"Lifetime control in silicon power devices is required to reduce turn-off time and energy loss during switching. High energy (2 MeV range) electron and proton irradiations have been used for this purpose. We developed a new method of introducing defects by using low energy (270 keV) electron irradiation and hydrogen annealing. It was generally considered that 270 keV energy electrons are not strong enough to introduce defects. It is thought that the silicon knocked out by a low energy electron stays around the vacancy, and that the silicon can come back to the vacancy very easily. However, if the defect is filled by some other atom, such as hydrogen, the knocked-out silicon can not come back easily, and a higher and more stable defect concentration can be expected. This is why we used hydrogen annealing after low energy electron irradiation. We annealed the irradiated diodes in nitrogen or hydrogen atmosphere. The diodes annealed in hydrogen showed a significant lifetime reduction. This was manifested by increase in forward diode voltage, and decrease in turn-off charge.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122481328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a novel micro electromechanical tunable capacitor with a high tuning range 一种新型高调谐范围微机电可调谐电容器的研制
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877111
J. Zou, Chang Liu
{"title":"Development of a novel micro electromechanical tunable capacitor with a high tuning range","authors":"J. Zou, Chang Liu","doi":"10.1109/DRC.2000.877111","DOIUrl":"https://doi.org/10.1109/DRC.2000.877111","url":null,"abstract":"Micro electromechanical tunable capacitors have been under active development recently (Young and Boser, 1996; Young et al., 1998; Dec and Suyama, 1997; Yao et al., 1998). The advantages of integrating MEMS (microelectromechanical systems) tunable capacitors on RF integrated circuits include: (1) higher quality factor compared with IC counterparts; (2) lower interconnection- and parasitic-related loss; (3) reduced system complexity. We report a new parallel-plate tunable capacitor design with a tuning range greater than the 50% limit imposed by the pull-in effect. This new design has been validated by FEA (finite element analysis) simulation using MEMCAD 4.0.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122498981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Development of /spl delta/B/i-Si//spl delta/Sb and /spl delta/B/i-Si//spl delta/Sb/i-Si//spl delta/B resonant interband tunnel diodes for integrated circuit applications 集成电路用/spl delta/B/i-Si//spl delta/Sb和/spl delta/B/i-Si//spl delta/Sb/i-Si//spl delta/B谐振带间隧道二极管的研制
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877131
S. Rommel, Niu Jin, T. Dillon, S. Di Giacomo, J. Banyai, B. Cord, C. D'Imperio, D. J. Hancock, N. Kirpalani, V. Emanuele, P. R. Berger, P. Thompson, K. Hobart, R. Lake
{"title":"Development of /spl delta/B/i-Si//spl delta/Sb and /spl delta/B/i-Si//spl delta/Sb/i-Si//spl delta/B resonant interband tunnel diodes for integrated circuit applications","authors":"S. Rommel, Niu Jin, T. Dillon, S. Di Giacomo, J. Banyai, B. Cord, C. D'Imperio, D. J. Hancock, N. Kirpalani, V. Emanuele, P. R. Berger, P. Thompson, K. Hobart, R. Lake","doi":"10.1109/DRC.2000.877131","DOIUrl":"https://doi.org/10.1109/DRC.2000.877131","url":null,"abstract":"Recent developments in Si based tunnel diode technologies have made the realization of circuits incorporating both tunnel diodes and transistors feasible. A recent study by the authors presented the design of an n-on-p Si RITD layer with a peak-to-valley current ratio (PVCR) of 2.15 at a current density of 3 kA/cm/sup 2/ which was grown by molecular beam epitaxy (MBE) (Thompson et al, Appl. Phys. Lett. vol. 75, pp. 1308-1310, 1999). Further studies of this structure investigated additional tunnel barrier thicknesses of 4 nm, 8 nm, and 10 nm. In all samples, room temperature NDR was observed comparable to that of the baseline 6 nm RITD. Simple adjustments to the tunnel barrier thickness can be made to tailor the performance for a particular circuit application. However, growth of a complimentary p-on-n tunnel diode is problematic due to Sb segregation through the intrinsic tunneling spacer. The solution is to control the Sb segregation by employing multiple substrate temperatures during MBE growth. Following the success of the complementary p-on-n growth strategy, it was now possible to demonstrate the integration of two tunnel diodes in a single growth. The basic flow and design presented here follow that of III-V RITDs (Yang et al, 1995), presenting a symmetric pnp RITD structure. The motivation for developing this structure was to mimic the I-V characteristic of III-V RITDs which have NDR regions under forward and reverse bias. A Si-based structure with these properties would facilitate the development of a Goto-type memory cell (Goto et al, 1960).","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114548171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultraviolet photon counting with GaN avalanche photodiodes 氮化镓雪崩光电二极管的紫外光子计数
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877134
K. A. Mcintosh, S. Verghese, R. Molnar, L. Mahoney, K. Molvar, M. Connors, R. Aggarwal, I. Melngailis
{"title":"Ultraviolet photon counting with GaN avalanche photodiodes","authors":"K. A. Mcintosh, S. Verghese, R. Molnar, L. Mahoney, K. Molvar, M. Connors, R. Aggarwal, I. Melngailis","doi":"10.1109/DRC.2000.877134","DOIUrl":"https://doi.org/10.1109/DRC.2000.877134","url":null,"abstract":"Recent demonstrations of GaN APDs with spatially uniform gain regions free of microplasmas reported multiplication gain (M) values of 10-25 (McIntosh et al, 1999; Carrano et al., 2000). We report here on photon counting, or Geiger-mode, measurements of GaN APDs which entail much greater avalanche gain (10/sup 4/<M<10/sup 8/). The photon detection efficiency (PDE) at 325 nm and dark count rate were measured as a function of the applied voltage bias. Measurements have been made using both passive-quench and gated-quench modes of operation. A PDE of 13% is found at a dark count rate of 400 kHz. The best devices exhibit leakage current less than 20 nA at 90% of breakdown voltage.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129918634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
Silicon micromachines for lightwave networks: can little machines make it big? 用于光波网络的硅微机器:小机器能变大吗?
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877068
D. Bishop, V. Aksyuk, C. Bolle, R. Giles, F. Pardo, J. Walker
{"title":"Silicon micromachines for lightwave networks: can little machines make it big?","authors":"D. Bishop, V. Aksyuk, C. Bolle, R. Giles, F. Pardo, J. Walker","doi":"10.1109/DRC.2000.877068","DOIUrl":"https://doi.org/10.1109/DRC.2000.877068","url":null,"abstract":"Silicon micromechanics is an emerging field which is beginning to impact upon almost every area of science and technology. In areas as diverse as the chemical, automotive, aeronautical, cellular and optical communications industries, silicon micromachines are becoming the solution of choice for many problems. In this paper, we describe what they are, how they are built and show how they have the potential to revolutionize lightwave systems. Devices such as optical switches, variable attenuators, active equalizers, add/drop multiplexers, optical crossconnects, gain tilt equalizers, data transmitters and many others are beginning to find ubiquitous application in advanced lightwave systems. We show examples of these devices and describe some of the challenges in attacking the billions of dollars in addressable markets for this technology.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130362909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
30 nm ultra-thin-body SOI MOSFET with selectively deposited Ge raised S/D 30 nm超薄体SOI MOSFET，选择性沉积Ge提高S/D
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877072
Yang-Kyu Choi, Yoo-Chan Jeon, P. Ranade, H. Takenuchi, T. King, J. Bokor, C. Hu
{"title":"30 nm ultra-thin-body SOI MOSFET with selectively deposited Ge raised S/D","authors":"Yang-Kyu Choi, Yoo-Chan Jeon, P. Ranade, H. Takenuchi, T. King, J. Bokor, C. Hu","doi":"10.1109/DRC.2000.877072","DOIUrl":"https://doi.org/10.1109/DRC.2000.877072","url":null,"abstract":"MOSFETs with selectively deposited Ge raised source/drain (S/D) implemented in 8 nm ultra-thin-body (UTB) SOI are demonstrated. The Ge is selectively deposited by LPCVD and annealed at a low temperature using RTA (650/spl deg/C, 20 s). Devices with gate lengths down to 30 nm are obtained with 8 nm UTB and show excellent short-channel behavior.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123402961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Vacuum microelectronic electron emitter by InP double barrier diode toward RF application 用InP双势垒二极管制造的真空微电子电子发射器在射频中的应用
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877086
Y. Miyamoto, M. Kurita, K. Furuya
{"title":"Vacuum microelectronic electron emitter by InP double barrier diode toward RF application","authors":"Y. Miyamoto, M. Kurita, K. Furuya","doi":"10.1109/DRC.2000.877086","DOIUrl":"https://doi.org/10.1109/DRC.2000.877086","url":null,"abstract":"In this paper, the possibility of high-speed vacuum microelectronic devices is discussed. As a field emitter is limited by the charging time, an electron emitter using the internal field in a semiconductor has been proposed. With a view toward the development of a semiconductor electron emitter, preliminary results for an InP double barrier emitter are presented. The observed efficiency was about 10/sup -3/ without surface treatment.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121389708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOCVD-grown 175 GHz InP-GaAs/sub x/Sb/sub 1-x/-InP DHBTs with high current gains using strained and heavily C-doped base layers mocvd生长的175 GHz InP-GaAs/sub -x/ Sb/sub - 1-x/-InP dhbt具有高电流增益，采用应变和大量掺杂c的基材层
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877124
M. Dvorak, N. Matine, S. Watkins, C. Bolognesi
{"title":"MOCVD-grown 175 GHz InP-GaAs/sub x/Sb/sub 1-x/-InP DHBTs with high current gains using strained and heavily C-doped base layers","authors":"M. Dvorak, N. Matine, S. Watkins, C. Bolognesi","doi":"10.1109/DRC.2000.877124","DOIUrl":"https://doi.org/10.1109/DRC.2000.877124","url":null,"abstract":"Summary form only given. In this paper, we report high current gain InP-GaAsSb-InP DHBTs implemented with a 200 /spl Aring/ thick strained GaAs/sub 0.6/Sb/sub 0.4/ highly-doped base layer (C: 8/spl times/10/sup 19/ cm/sup -3/). The devices exhibit peak cut-off frequencies f/sub T/= 175 GHz and f/sub max/=106 GHz with a BV/sub CEO/=6 V and a DC current gain /spl beta/=200-300 which can be traded off for higher f/sub max/ values. The devices behave extremely well even at low supply voltages: f/sub T/ remains above 150 GHz (125 GHz) for V/sub CE+/=0.75 V (0.55 V). This work is the first demonstration of a sub-picosecond transit time for an HBT with a base material other than GaInAs or GaAs, and we attribute the tenfold increase in /spl beta/ with respect to our previous work (Bolognesi et al, 1999) on the use of a strained As-rich base layer.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127755878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices 利用纳米晶硅超晶格共振隧道的记忆装置
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877085
L. Tsybeskov, L. Montès, G. Grom, R. Krishnan, P. Fauchet, B. White
{"title":"Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices","authors":"L. Tsybeskov, L. Montès, G. Grom, R. Krishnan, P. Fauchet, B. White","doi":"10.1109/DRC.2000.877085","DOIUrl":"https://doi.org/10.1109/DRC.2000.877085","url":null,"abstract":"In this paper, we present a definitive experimental observation of resonant carrier tunneling in nanocrystalline Si-SiO/sub 2/ superlattices, and discuss utilization of our findings in memory devices. The paper gives an example of negative differential conductivity associated with hole tunneling in a 10 period 45 /spl Aring/ Si/15 /spl Aring/ SiO/sub 2/ superlattice, and summarizes the properties of nanocrystalline Si superlattice based memory device prototypes. The device properties, including operating voltage, endurance, retention time and dynamic leakage, are discussed.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126554172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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