58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)最新文献_第2页

Modeling high k gate current from p-type Si inversion layers 用p型硅反转层模拟高k栅极电流

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877090

Y.-Y. Fan, S. Mudanai, W. Qi, J.C. Lee, A. Tasch, L. Register, S. Banerjee

引用次数: 3

Vertical P-MOSFETs with heterojunction between source/drain and channel 源极/漏极和沟道之间具有异质结的垂直p - mosfet

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877073

Xiangdong Chen, Q. Ouyang, K. C. Liu, Zhong Shi, A. Tasch, Sanjay K. Banerjee

引用次数: 6

Wideband AlGaN-GaN HEMTs on SiC for low noise applications 用于低噪声应用的SiC上的宽带AlGaN-GaN hemt

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877079

Wu Lu, J. Yang, M.A. Khan, I. Adesida

{"title":"Wideband AlGaN-GaN HEMTs on SiC for low noise applications","authors":"Wu Lu, J. Yang, M.A. Khan, I. Adesida","doi":"10.1109/DRC.2000.877079","DOIUrl":"https://doi.org/10.1109/DRC.2000.877079","url":null,"abstract":"AlGaN-GaN high electron mobility transistors (HEMTs) have attracted attention because of their extremely high current drive capability and high power performance. Although these GaN-based FETs are primarily considered for high power and high temperature applications, it is important to investigate their microwave noise characteristics. Indeed, the only report in literature (Ping et al, Electron. Lett. vol. 36, pp. 175-176, 2000) to date has shown that AlGaN-GaN HEMTs do have respectable noise properties that are comparable to those of AlGaAs-GaAs HEMTs. Specifically, we have recently reported on 0.25 /spl mu/m AlGaN-GaN HEMTs with a minimum noise figure (NF/sub min/) of 0.77 dB at 5 GHz and a NF/sub min/ of 1.06 dB at 10 GHz. These results are quite counter-intuitive to what might be expected due to the material properties, and especially the defect density, of GaN. However, the results do motivate further investigations of the noise properties of AlGaN-GaN HEMTs. In this paper, we report our latest results on DC, RF, and high frequency noise characteristics of AlGaN-GaN HEMTs, demonstrating a record bandwidth of 100 GHz and NF/sub min/ of 0.53 dB at 8 GHz.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"127 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132886627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

AlGaN-GaN HEMTs and HBTs for microwave power 用于微波功率的gan - gan hemt和HBTs

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877077

U. Mishra, R. Ventury, L. McCarthy, Y. Smorchkova, S. Keller, H. Xing, N. Zhang, J. Speck, R. York, S. Denbaars, Y. Wu, P. Parikh, P. Chavarkar

{"title":"AlGaN-GaN HEMTs and HBTs for microwave power","authors":"U. Mishra, R. Ventury, L. McCarthy, Y. Smorchkova, S. Keller, H. Xing, N. Zhang, J. Speck, R. York, S. Denbaars, Y. Wu, P. Parikh, P. Chavarkar","doi":"10.1109/DRC.2000.877077","DOIUrl":"https://doi.org/10.1109/DRC.2000.877077","url":null,"abstract":"Summary form only given. The AlGaN-GaN based material system offers the three most important materials properties required for efficient microwave power generation: very high breakdown electric field (/spl sim/2 MV/cm), high electron mobility and velocity (/spl mu//sub c//spl sim/1000 cm/sup 2//spl middot/V/sup -1/s/sup -1/ and v/sub s//spl sim/2/spl times/10/sup 7/ cm/spl middot/s/sup -1/ in bulk materials) and heterojunction technology to optimize device design. This has led to the rapid development of AlGaN-GaN HEMTs, grown heteroepitaxially on either sapphire or SiC substrates. AlGaN-GaN HBTs also show promise for power amplifier and switching applications. Inherent strengths of the HBT structure include high current densities and low phase noise, as well as improved linearity and threshold control. The progress in HEMT DC and RF performance has been spectacular and the possibility of insertion into high power systems is a distinct possibility. The HBTs continue to have to battle problems with p-type doping and associated processing difficulties. However, sustained progress in engineering around this problem holds promise for the future.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132197682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design optimization of stacked gate oxides with easy evaluation of gate leakage in deep submicron MOSFET 深亚微米MOSFET中易于评估栅漏的堆叠栅氧化物设计优化

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877093

Jinlong Zhang, J. Yuan, Yi Ma, A. Oates

引用次数: 0

Low threshold 1.3 /spl mu/m GaAsSb lasers on GaAs substrates GaAs衬底上的低阈值1.3 /spl μ m GaAsSb激光器

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877115

O. Blum, J. Klem

{"title":"Low threshold 1.3 /spl mu/m GaAsSb lasers on GaAs substrates","authors":"O. Blum, J. Klem","doi":"10.1109/DRC.2000.877115","DOIUrl":"https://doi.org/10.1109/DRC.2000.877115","url":null,"abstract":"Summary form only given. Vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 /spl mu/m are of great interest for optical interconnect and communication applications. It is desirable to grow VCSELs on GaAs substrates due to well developed DBRs, ease of processing and accessibility of the oxidation technology available in GaAs/AlGaAs. Recently, significant effort has been dedicated to development of 1.3 /spl mu/m emitting active regions on GaAs substrates. We report room temperature, pulsed operation of SQW compressively strained type-II GaAsSb-InGaAs edge emitting lasers grown by molecular beam epitaxy on GaAs substrates. All data is measured on broad area, gain guided structures at room temperature. For a 1500 /spl mu/m long and 75 /spl mu/m wide laser, lasing occurs at 1.29 /spl mu/m, although electroluminescence peaks near 1.36 /spl mu/m at low injection currents. Similar blue shifts have been observed in type II structures (Peter et al., 1998) or in compositionally modulated materials (Fouquet et al., 1990). For a 2000 /spl mu/m/spl times/100 /spl mu/m device, average threshold currents were found to be 0.75 A with an average threshold current density of 380 A/cm/sup 2/. We measured an average slope efficiency of 14%. The threshold current density extrapolated for an infinite resonator length (for a 75 /spl mu/m wide laser) was found to be 120 A/cm/sup 2/. We also measured the characteristic temperature T/sub 0/ for these lasers and found it to be 60 K.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116863886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability and modeling of GaN-based light emitting diode 氮化镓基发光二极管的可靠性与建模

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877095

Hyun-Soo Kim, Ji-Myon Lee, C. Huh, Sang‐Woo Kim, Dong-Joon Kim, Seong-Ju Park, H. Hwang

引用次数: 1

Multiple-valued memory operation in SiN-based single-electron memory 基于sin的单电子存储器中的多值存储操作

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877128

H. Sunamura, H. Kawaura, T. Sakamoto, T. Baba

引用次数: 0

A novel sub-10 nm transistor 一种新型的10纳米以下晶体管

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877094

P. Kalavade, K. Saraswat

引用次数: 2

Design and characterization of GaAs-Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/-GaAs NpN double heterojunction bipolar transistors with low turn-on voltage 低导通电压GaAs-Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/-GaAs NpN双极异质结晶体管的设计与表征

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI: 10.1109/DRC.2000.877125

R. Welty, H. Xin, K. Mochizuki, C. Tu, P. Asbeck

{"title":"Design and characterization of GaAs-Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/-GaAs NpN double heterojunction bipolar transistors with low turn-on voltage","authors":"R. Welty, H. Xin, K. Mochizuki, C. Tu, P. Asbeck","doi":"10.1109/DRC.2000.877125","DOIUrl":"https://doi.org/10.1109/DRC.2000.877125","url":null,"abstract":"GaAs-based heterojunction bipolar transistors (HBTs) have achieved widespread in high performance microwave and digital applications. However, they have a large base-emitter turn-on voltage V/sub BE/ of 1.4 V (at high current density). It is important to develop techniques to reduce V/sub BE/, particularly for low power applications. In this work, NpN double heterojunction bipolar transistors (DHBTs) were fabricated on a GaAs substrate with a Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/ base that has a bandgap energy of 0.98 eV. These devices have a turn-on voltage V/sub BE/ that is 0.4 V lower than that of their GaAs base counterparts, allowing operation with lower power supply voltage and reduced power dissipation. To overcome the large conduction band discontinuity between GaAs and Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/, both chirped compositional grading and delta doping were employed. In this paper, we report our first Ga(0.89)In/sub 0.11/N/sub 0.02/As/sub 0.98/-base DHBT results, which has a substantially greater V/sub BE/ reduction. The samples were grown by GSMBE with thermally cracked arsine and RF-plasma nitrogen radical beam as the arsenic and nitrogen source, respectively.","PeriodicalId":126654,"journal":{"name":"58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122903452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4