mocvd生长的175 GHz InP-GaAs/sub -x/ Sb/sub - 1-x/-InP dhbt具有高电流增益，采用应变和大量掺杂c的基材层

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI:10.1109/DRC.2000.877124

M. Dvorak, N. Matine, S. Watkins, C. Bolognesi

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引用次数: 0

摘要

只提供摘要形式。在本文中，我们报道了采用200 /spl Aring/厚应变GaAs/sub 0.6/Sb/sub 0.4/高掺杂基层(C: 8/spl倍/10/sup 19/ cm/sup -3/)实现的高电流增益InP-GaAsSb-InP DHBTs。该器件的峰值截止频率为f/sub T/= 175 GHz和f/sub max/=106 GHz, BV/sub CEO/=6 V，直流电流增益/spl beta/=200-300，可用于更高的f/sub max/值。即使在低电源电压下，这些器件也表现得非常好:当V/sub CE+/=0.75 V (0.55 V)时，f/sub T/仍保持在150 GHz (125 GHz)以上。这项工作首次展示了使用GaInAs或GaAs以外的基材的HBT的亚皮秒传输时间，我们将/spl beta/的十倍归功于我们之前的工作(Bolognesi等人，1999)使用应变富as基材。

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MOCVD-grown 175 GHz InP-GaAs/sub x/Sb/sub 1-x/-InP DHBTs with high current gains using strained and heavily C-doped base layers

Summary form only given. In this paper, we report high current gain InP-GaAsSb-InP DHBTs implemented with a 200 /spl Aring/ thick strained GaAs/sub 0.6/Sb/sub 0.4/ highly-doped base layer (C: 8/spl times/10/sup 19/ cm/sup -3/). The devices exhibit peak cut-off frequencies f/sub T/= 175 GHz and f/sub max/=106 GHz with a BV/sub CEO/=6 V and a DC current gain /spl beta/=200-300 which can be traded off for higher f/sub max/ values. The devices behave extremely well even at low supply voltages: f/sub T/ remains above 150 GHz (125 GHz) for V/sub CE+/=0.75 V (0.55 V). This work is the first demonstration of a sub-picosecond transit time for an HBT with a base material other than GaInAs or GaAs, and we attribute the tenfold increase in /spl beta/ with respect to our previous work (Bolognesi et al, 1999) on the use of a strained As-rich base layer.

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58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)

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