Ultraviolet photon counting with GaN avalanche photodiodes

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI:10.1109/DRC.2000.877134

K. A. Mcintosh, S. Verghese, R. Molnar, L. Mahoney, K. Molvar, M. Connors, R. Aggarwal, I. Melngailis

引用次数: 37

Abstract

Recent demonstrations of GaN APDs with spatially uniform gain regions free of microplasmas reported multiplication gain (M) values of 10-25 (McIntosh et al, 1999; Carrano et al., 2000). We report here on photon counting, or Geiger-mode, measurements of GaN APDs which entail much greater avalanche gain (10/sup 4/

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氮化镓雪崩光电二极管的紫外光子计数

最近对无微等离子体的具有空间均匀增益区域的GaN apd的演示报道倍增增益(M)值为10-25 (McIntosh等，1999;Carrano et al.， 2000)。我们在这里报告光子计数，或盖革模式，测量GaN apd需要更大的雪崩增益(10/sup 4/

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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