Vacuum microelectronic electron emitter by InP double barrier diode toward RF application

Abstract

In this paper, the possibility of high-speed vacuum microelectronic devices is discussed. As a field emitter is limited by the charging time, an electron emitter using the internal field in a semiconductor has been proposed. With a view toward the development of a semiconductor electron emitter, preliminary results for an InP double barrier emitter are presented. The observed efficiency was about 10/sup -3/ without surface treatment.