用InP双势垒二极管制造的真空微电子电子发射器在射频中的应用

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) Pub Date : 2000-06-19 DOI:10.1109/DRC.2000.877086

Y. Miyamoto, M. Kurita, K. Furuya

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引用次数: 0

摘要

本文讨论了高速真空微电子器件的可能性。针对场发射体受充电时间限制的问题，提出了一种利用半导体内部场的电子发射体。针对半导体电子发射体的发展，给出了InP双势垒发射体的初步研究结果。未进行表面处理的效率约为10/sup -3/。

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Vacuum microelectronic electron emitter by InP double barrier diode toward RF application

In this paper, the possibility of high-speed vacuum microelectronic devices is discussed. As a field emitter is limited by the charging time, an electron emitter using the internal field in a semiconductor has been proposed. With a view toward the development of a semiconductor electron emitter, preliminary results for an InP double barrier emitter are presented. The observed efficiency was about 10/sup -3/ without surface treatment.

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58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526)

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