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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.最新文献

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Temperature, modulation and reliability characteristics of 1.3 /spl mu/m-VCSELs on InP with AlGaInAs/InP lattice matched DBR AlGaInAs/InP晶格匹配DBR的1.3 /spl mu/m-VCSELs在InP上的温度、调制和可靠性特性
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382783
N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, Xingsheng Liu, B. Bhat, C. Zah
{"title":"Temperature, modulation and reliability characteristics of 1.3 /spl mu/m-VCSELs on InP with AlGaInAs/InP lattice matched DBR","authors":"N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, Xingsheng Liu, B. Bhat, C. Zah","doi":"10.1109/ISLC.2004.1382783","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382783","url":null,"abstract":"Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116079016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers InGaAs/InGaAsP/lnP量子点激光器的室温连续波工作
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382754
S. H. Pyun, S.H. Lee, I. Lee, W. Jeong, J.W. Jang, R. Stevenson, P. Dapkus, D. Lee, J.H. Lee, D. Oh
{"title":"Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers","authors":"S. H. Pyun, S.H. Lee, I. Lee, W. Jeong, J.W. Jang, R. Stevenson, P. Dapkus, D. Lee, J.H. Lee, D. Oh","doi":"10.1109/ISLC.2004.1382754","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382754","url":null,"abstract":"Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot laser at 1.44 /spl mu/m with I/sub th/ of 62.5 mA was achieved with a ridge waveguide laser with 2 /spl mu/m ridge width and a cavity length of 400 /spl mu/m.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129603742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable two-section shift-layer DFB lasers and wavelength converters 可调谐双段移位层DFB激光器和波长转换器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382763
San-Liang Lee, Chih-Jen Wang, Pei-Ling Jiang, Chiu-Lin Yao, Chia-Chien Lin, W. Ho
{"title":"Tunable two-section shift-layer DFB lasers and wavelength converters","authors":"San-Liang Lee, Chih-Jen Wang, Pei-Ling Jiang, Chiu-Lin Yao, Chia-Chien Lin, W. Ho","doi":"10.1109/ISLC.2004.1382763","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382763","url":null,"abstract":"Two-section shift-layer DFB lasers are fabricated to realize tunable lasers with high single-mode stability and wavelength converters with reshaping capability. 5.2-nm of wavelength tuning and conversion over 30-THz of input frequencies are demonstrated.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124084827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W 近衍射限制980 nm锥形二极管激光器，输出功率为6.7 W
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382746
K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, Arne Knauer, S. Schwertfeger, H. Wenzel, G. Tränkle
{"title":"Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W","authors":"K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, Arne Knauer, S. Schwertfeger, H. Wenzel, G. Tränkle","doi":"10.1109/ISLC.2004.1382746","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382746","url":null,"abstract":"High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115377441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Power scaling behavior of the relative intensity noise of quantum cascade lasers 量子级联激光器相对强度噪声的功率缩放特性
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382737
T. Gensty, W. Elsasser
{"title":"Power scaling behavior of the relative intensity noise of quantum cascade lasers","authors":"T. Gensty, W. Elsasser","doi":"10.1109/ISLC.2004.1382737","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382737","url":null,"abstract":"We investigate experimentally and theoretically the relative intensity noise (RIN) of quantum cascade lasers (QCL). We find that the scaling behavior of RIN on the optical power depends on the number of cascaded gain stages.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114176699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Record-low thresholds of InGaAsN/GaAs SQWs lasers 创纪录的低阈值InGaAsN/GaAs sqw激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382759
R. Averbeck, G. Jaschke, L. Geelhaar, H. Riechert
{"title":"Record-low thresholds of InGaAsN/GaAs SQWs lasers","authors":"R. Averbeck, G. Jaschke, L. Geelhaar, H. Riechert","doi":"10.1109/ISLC.2004.1382759","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382759","url":null,"abstract":"We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122949604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-threshold operation of distributed reflector laser with width modulated wirelike active regions 宽度调制线状有源区分布式反射激光器的低阈值工作
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382792
K. Ohira, T. Murayama, M. Hirose, H. Yagi, S. Tamura, S. Arai
{"title":"Low-threshold operation of distributed reflector laser with width modulated wirelike active regions","authors":"K. Ohira, T. Murayama, M. Hirose, H. Yagi, S. Tamura, S. Arai","doi":"10.1109/ISLC.2004.1382792","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382792","url":null,"abstract":"A distributed reflector (DR) laser consisting of an active DFB section and a passive DBR section was realized by modulating widths of wirelike active regions. A threshold current as low as 1.5 mA, a differential quantum efficiency from the front facet of 21% and a sub-mode suppression ratio (SMSR) over 50 dB were realized for a stripe width of 3.4 /spl mu/m and a DFB section length of 150.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115982991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of growth temperature on defect density in 1.3/spl mu/m GaInNAs-based lasers 生长温度对1.3/spl mu/m gainas基激光器缺陷密度的影响
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 1900-01-01 DOI: 10.1109/ISLC.2004.1382767
R. Fehse, S. Sweeney, A. Adams, D. McConville, H. Riechert, L. Geelhaar
{"title":"Influence of growth temperature on defect density in 1.3/spl mu/m GaInNAs-based lasers","authors":"R. Fehse, S. Sweeney, A. Adams, D. McConville, H. Riechert, L. Geelhaar","doi":"10.1109/ISLC.2004.1382767","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382767","url":null,"abstract":"We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3 /spl mu/m GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130756596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic dual-wavelength lasers for CD-R/DVD/spl plusmn/RW/R/RW 单片双波长激光器，用于CD-R/DVD/spl plusmn/RW/R/RW
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 1900-01-01 DOI: 10.1109/ISLC.2004.1382787
S. Agatsuma, N. Hoshi, K. Tanno, H. Iki, S. Yoshida, K. Sahara, S. Uchida, T. Yamamoto
{"title":"Monolithic dual-wavelength lasers for CD-R/DVD/spl plusmn/RW/R/RW","authors":"S. Agatsuma, N. Hoshi, K. Tanno, H. Iki, S. Yoshida, K. Sahara, S. Uchida, T. Yamamoto","doi":"10.1109/ISLC.2004.1382787","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382787","url":null,"abstract":"We succeeded the monolithic integration of a 160 mW laser for DVD/spl plusmn/RW/R/RAM and a 240 mW laser for CD-R.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129873134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High power 660-nm laser diodes for recordable dual layer 用于可记录双层的高功率660纳米激光二极管
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 1900-01-01 DOI: 10.1109/islc.2004.1382786
K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura
{"title":"High power 660-nm laser diodes for recordable dual layer","authors":"K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura","doi":"10.1109/islc.2004.1382786","DOIUrl":"https://doi.org/10.1109/islc.2004.1382786","url":null,"abstract":"A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"82 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120976509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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