发布求助
文献互助 智能选刊 最新文献

创纪录的低阈值InGaAsN/GaAs sqw激光器

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382759
R. Averbeck, G. Jaschke, L. Geelhaar, H. Riechert
{"title":"创纪录的低阈值InGaAsN/GaAs sqw激光器","authors":"R. Averbeck, G. Jaschke, L. Geelhaar, H. Riechert","doi":"10.1109/ISLC.2004.1382759","DOIUrl":null,"url":null,"abstract":"We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Record-low thresholds of InGaAsN/GaAs SQWs lasers\",\"authors\":\"R. Averbeck, G. Jaschke, L. Geelhaar, H. Riechert\",\"doi\":\"10.1109/ISLC.2004.1382759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

我们提出了一项系统的研究，基于在GaAs上生长的最简单的InGaAsN/GaAs SWQ结构，通过等离子体辅助MBE实现低阈值，长波长激光器。据报道，低阈值电流密度可达1430nm。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
分享
查看原文 本刊更多论文
Record-low thresholds of InGaAsN/GaAs SQWs lasers
We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.
求助全文
通过发布文献求助，成功后即可免费获取论文全文。 去求助
来源期刊
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信