用于可记录双层的高功率660纳米激光二极管

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 1900-01-01 DOI:10.1109/islc.2004.1382786

K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura

{"title":"用于可记录双层的高功率660纳米激光二极管","authors":"K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura","doi":"10.1109/islc.2004.1382786","DOIUrl":null,"url":null,"abstract":"A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"82 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High power 660-nm laser diodes for recordable dual layer\",\"authors\":\"K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura\",\"doi\":\"10.1109/islc.2004.1382786\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"82 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/islc.2004.1382786\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/islc.2004.1382786","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过减小内部损耗和优化脊形，实现了具有300 mW以上高扭结电平的高功率660nm激光二极管。它是有前途的可记录的双层DVD驱动器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High power 660-nm laser diodes for recordable dual layer

A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

自引率

0.00%

发文量