AlGaInAs/InP晶格匹配DBR的1.3 /spl mu/m-VCSELs在InP上的温度、调制和可靠性特性

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382783

N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, Xingsheng Liu, B. Bhat, C. Zah

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引用次数: 9

摘要

已经证明了具有AlGaInAs/InP DBR的基于InP的VCSELs在高达125 /spl度/C的1.3 /spl mu/m的激光工作。在85 /spl度/C下，单模功率为0.6 mW, 10公里传输速率为10 Gbit/s，寿命>2500小时。

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Temperature, modulation and reliability characteristics of 1.3 /spl mu/m-VCSELs on InP with AlGaInAs/InP lattice matched DBR

Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.

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来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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