K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, Arne Knauer, S. Schwertfeger, H. Wenzel, G. Tränkle
{"title":"近衍射限制980 nm锥形二极管激光器,输出功率为6.7 W","authors":"K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, Arne Knauer, S. Schwertfeger, H. Wenzel, G. Tränkle","doi":"10.1109/ISLC.2004.1382746","DOIUrl":null,"url":null,"abstract":"High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W\",\"authors\":\"K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, Arne Knauer, S. Schwertfeger, H. Wenzel, G. Tränkle\",\"doi\":\"10.1109/ISLC.2004.1382746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W
High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.