High power 660-nm laser diodes for recordable dual layer

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 1900-01-01 DOI:10.1109/islc.2004.1382786

K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura

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Abstract

A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.

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用于可记录双层的高功率660纳米激光二极管

通过减小内部损耗和优化脊形，实现了具有300 mW以上高扭结电平的高功率660nm激光二极管。它是有前途的可记录的双层DVD驱动器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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