发布求助
文献互助 智能选刊 最新文献

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.最新文献

筛选
英文 中文
High-power blue-violet laser diodes on GaN substrates 氮化镓衬底上的高功率蓝紫色激光二极管
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382756
T. Mizuno, M. Takeya, S. Ikeda, T. Fujimoto, Y. Ohfuji, K. Oikawa, M. Taniguchi, H. Ichinokura, T. Hashizu, M. Ikeda
{"title":"High-power blue-violet laser diodes on GaN substrates","authors":"T. Mizuno, M. Takeya, S. Ikeda, T. Fujimoto, Y. Ohfuji, K. Oikawa, M. Taniguchi, H. Ichinokura, T. Hashizu, M. Ikeda","doi":"10.1109/ISLC.2004.1382756","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382756","url":null,"abstract":"We have fabricated 400-nm-band GaN-based blue-violet laser diodes (BV-LDs) with high reliability on GaN substrates. Under 45 mW continuous wave (CW) operation at 60/spl deg/C, these LDs have been operating stably for more than 1400 h. We have adopted the narrow ridge width of 1.4 /spl mu/m and both sides of ridge stripe are covered with a stacked layer of Si on SiO/sub 2/. As a result, we have succeed in producing BV-LDs with a kink-free output power of more than 150 mW. The threshold current was 35.4 mA at 25/spl deg/C. The operating current and voltage were 65.8 mW and 4.66 V, respectively, under 45 mW CW operation at 25/spl deg/C. Their characteristics came close to surpassing the best characteristics of BV-LDs grown on ELO-GaN/sapphire, demonstrating that practical BV-LDs suitable for next-generation blu-ray disc system can be produced on GaN substrates.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126440750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic crystal semiconductor lasers 光子晶体半导体激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382725
S. Noda
{"title":"Photonic crystal semiconductor lasers","authors":"S. Noda","doi":"10.1109/ISLC.2004.1382725","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382725","url":null,"abstract":"Semiconductor lasers based on two-dimensional photonic crystals are described. It is shown that unprecedented type of lasers with perfect single mode over a large area and high output power surface-emission can be realized.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131166367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ageing studies on red-emitting VCSELs for polymer optical fibre applications 聚合物光纤用红光VCSELs的老化研究
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382762
T. Sale, D. Lancefield, B. Corbett, J. Justice
{"title":"Ageing studies on red-emitting VCSELs for polymer optical fibre applications","authors":"T. Sale, D. Lancefield, B. Corbett, J. Justice","doi":"10.1109/ISLC.2004.1382762","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382762","url":null,"abstract":"The paper reports on the development of VCSELs emitting near to 650 nm for low cost links employing PMMA based polymer optical fibre (POF). AlGaInP/AlGaAs VCSELs are fabricated on wafers from two different MOCVD sources. Accelerated ageing tests are done for the two types of devices.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126817373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Square lattice photonic crystal waveguides for lasers emitting at 1.55 /spl mu/m 激光发射频率为1.55 /spl μ m的方形晶格光子晶体波导
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382791
X. Checoury, P. Boucaud, J. Lourtioz, F. Pommereau, C. Cuisin, E. Derouin, O. Drisse, L. Legouezigou, F. Lelarge, F. Poingt, G. Duan, S. Bonnefont, D. Mulin, J. Valentin, F. Lozes
{"title":"Square lattice photonic crystal waveguides for lasers emitting at 1.55 /spl mu/m","authors":"X. Checoury, P. Boucaud, J. Lourtioz, F. Pommereau, C. Cuisin, E. Derouin, O. Drisse, L. Legouezigou, F. Lelarge, F. Poingt, G. Duan, S. Bonnefont, D. Mulin, J. Valentin, F. Lozes","doi":"10.1109/ISLC.2004.1382791","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382791","url":null,"abstract":"Single mode lasing of square lattice photonic crystal (PhC) waveguides is investigated experimentally and compared to simulation results. Lasing of a Wl PhC waveguide structure at 1.5 /spl mu/m on InP substrate is reported for the first time.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129164568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Bandgap difference current confinement GaInNAs lasers 带隙差分电流约束GaInNAs激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382774
T. Katsuyama, J. Hashimoto, T. Saito, T. Yamada, T. Ishizuka, Y. Tsuji, K. Koyama, Y. Iguchi, K. Fujii, S. Takagishi, A. Ishida
{"title":"Bandgap difference current confinement GaInNAs lasers","authors":"T. Katsuyama, J. Hashimoto, T. Saito, T. Yamada, T. Ishizuka, Y. Tsuji, K. Koyama, Y. Iguchi, K. Fujii, S. Takagishi, A. Ishida","doi":"10.1109/ISLC.2004.1382774","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382774","url":null,"abstract":"Operation of real index guided GaInNAs quantum well lasers consisting of simple current confinement structure using bandgap difference is presented. The current confinement method is found to be useful to fabricate not only a single low cost optical devices but also photonic integrated circuit consisting with various waveguides and active devices.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127829065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micro-mechanically and widely tunable long-wavelength VCSELs 微机械和广泛可调谐的长波vcsel
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382785
M. Maute, G. Boehm, M. Amann, F. Riemenschneider, H. Halbritter, P. Meissner
{"title":"Micro-mechanically and widely tunable long-wavelength VCSELs","authors":"M. Maute, G. Boehm, M. Amann, F. Riemenschneider, H. Halbritter, P. Meissner","doi":"10.1109/ISLC.2004.1382785","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382785","url":null,"abstract":"An electrically pumped mode-hop-free tunable MEMS-VCSEL emitting at wavelengths around 1.55 /spl mu/m with a tuning range of up to 38 nm is presented.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129364684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dephasing effects on laser gain in shallow and deep semiconductor quantum dots 浅、深半导体量子点中失相对激光增益的影响
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382770
W. Chow, D. Huffaker
{"title":"Dephasing effects on laser gain in shallow and deep semiconductor quantum dots","authors":"W. Chow, D. Huffaker","doi":"10.1109/ISLC.2004.1382770","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382770","url":null,"abstract":"Effects of excitation-induced dephasing are investigated for semiconductor quantum-dot lasers.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130094935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mechanism of harmonic mode locking of the regeneratively mode-locked laser diode 再生锁模激光二极管谐波锁模机理
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382730
T. Ohno, T. Ito, K. Yoshino, H. Ito
{"title":"Mechanism of harmonic mode locking of the regeneratively mode-locked laser diode","authors":"T. Ohno, T. Ito, K. Yoshino, H. Ito","doi":"10.1109/ISLC.2004.1382730","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382730","url":null,"abstract":"It was found that the harmonic frequency optical injection locking of the regeneratively mode-locked laser diode occurs through the difference frequency component generation. Synchronization with up to 320-GHz input was also confirmed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124900079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C InGaAsP/InGaAlAs 1.55 /spl mu/m应变补偿MQW BH激光器，截止频率12.5 GHz，温度90/spl度/C
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382728
M. Mohrle, L. Morl, A. Sigmund, A. Suna, F. Reier, H. Roehle
{"title":"InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C","authors":"M. Mohrle, L. Morl, A. Sigmund, A. Suna, F. Reier, H. Roehle","doi":"10.1109/ISLC.2004.1382728","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382728","url":null,"abstract":"1.55 /spl mu/m strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90/spl deg/C they support a direct modulation with 12.5 GHz.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134309117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structure dependence of temperature rise in semiconductor lasers 半导体激光器温升的结构依赖性
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382777
E. Nomoto, S. Nakatsuka, H. Sato, N. Takahashi, T. Tsuchiya, T. Kitatani, K. Ouchi, K. Nakahara, M. Aoki
{"title":"Structure dependence of temperature rise in semiconductor lasers","authors":"E. Nomoto, S. Nakatsuka, H. Sato, N. Takahashi, T. Tsuchiya, T. Kitatani, K. Ouchi, K. Nakahara, M. Aoki","doi":"10.1109/ISLC.2004.1382777","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382777","url":null,"abstract":"Temperature rise in buried-heterostructure laser was uniform along laser cavity, while that in ridge-waveguide laser was abnormally larger at facets due to thermally enhanced optical absorption, which can be suppressed by using a non-injection facet.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122518916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信