半导体激光器温升的结构依赖性

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382777

E. Nomoto, S. Nakatsuka, H. Sato, N. Takahashi, T. Tsuchiya, T. Kitatani, K. Ouchi, K. Nakahara, M. Aoki

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引用次数: 0

摘要

埋置异质结构激光器沿激光腔的温升是均匀的，而脊波导激光器由于热增强的光吸收，在切面上的温升异常大，这可以通过使用非注入的切面来抑制。

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Structure dependence of temperature rise in semiconductor lasers

Temperature rise in buried-heterostructure laser was uniform along laser cavity, while that in ridge-waveguide laser was abnormally larger at facets due to thermally enhanced optical absorption, which can be suppressed by using a non-injection facet.

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来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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