InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382728

M. Mohrle, L. Morl, A. Sigmund, A. Suna, F. Reier, H. Roehle

引用次数: 0

Abstract

1.55 /spl mu/m strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90/spl deg/C they support a direct modulation with 12.5 GHz.

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InGaAsP/InGaAlAs 1.55 /spl mu/m应变补偿MQW BH激光器，截止频率12.5 GHz，温度90/spl度/C

制备了具有InGaAsP量子阱和InGaAlAs势垒的1.55 /spl mu/m应变补偿多量子阱埋入异质结构激光器，在低阈值电流下获得了高光功率。在90/spl度/C时，它们支持12.5 GHz的直接调制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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