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1992 Proceedings 42nd Electronic Components & Technology Conference最新文献

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Polyimide for thin film redistribution on glass-ceramic/copper multilevel substrates (ES9000 system) 用于玻璃陶瓷/铜多层基板上薄膜重分布的聚酰亚胺(ES9000系统)
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204278
G. Czornyj, K.R. Chen, G. Prada-Silva, A. Arnold, K. Souleotis, S. Kim, M. Ree, W. Volksen, D. Dawson, R. DiPietro
{"title":"Polyimide for thin film redistribution on glass-ceramic/copper multilevel substrates (ES9000 system)","authors":"G. Czornyj, K.R. Chen, G. Prada-Silva, A. Arnold, K. Souleotis, S. Kim, M. Ree, W. Volksen, D. Dawson, R. DiPietro","doi":"10.1109/ECTC.1992.204278","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204278","url":null,"abstract":"In 1991 IBM introduced a glass-ceramic substrate with thin-film redistribution as the first level package utilizing copper thin-film technology. The authors describe the development of a unique and novel polyimide, a derivative of PMDA-ODA, used in this substrate. The synthesis, processing, and material characterization are described. The discussion emphasizes the experimental techniques developed to fully characterize thin films (10-20 mu m thick) of polyimide to ensure the manufacturability and reliability of the thin-film redistribution.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121302313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Correlation of uniaxial tension-tension, torsion, and multiaxial tension-torsion fatigue failure in a 63Sn-37Pb solder alloy 63Sn-37Pb钎料合金单轴拉伸-拉伸、扭转和多轴拉伸-扭转疲劳失效的相关性
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204232
R. Cortez, E. Cutiongco, M. Fine, D. Jeannotte
{"title":"Correlation of uniaxial tension-tension, torsion, and multiaxial tension-torsion fatigue failure in a 63Sn-37Pb solder alloy","authors":"R. Cortez, E. Cutiongco, M. Fine, D. Jeannotte","doi":"10.1109/ECTC.1992.204232","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204232","url":null,"abstract":"Solder joint failure in surface mount technology applications occurs due to shear-dominated multiaxial strain-controlled fatigue. The authors investigate the multiaxial fatigue of solders and determine the feasibility of predicting the multiaxial fatigue behavior of solder alloys from the existing uniaxial experimental database. Isothermal uniaxial and multiaxial room-temperature total strain-controlled fatigue tests were conducted on bulk near-eutectic 63Sn-37Pb specimens at a frequency of 0.5 Hz. Fatigue surface examination indicated that cracking of the tin phase and separation of the tin-lead interface were the dominant fatigue failure mechanisms in this solder alloy regardless of the loading. A number of models for predicting mixed-mode fatigue lifetimes from uniaxial data were investigated. The present set of fatigue lifetime data for 63Sn-37Pb solder for uniaxial and tension torsion differed by a factor of 3.1 or less on the basis of several of these models. The maximum plastic shear strain was the best overall parameter to use in a Coffin-Manson-type plot with all data differing by no more than a factor of 2.8 from the uniaxial tension data.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121323511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Effective low-power CMOS terminating circuit for coupled transmission lines 用于耦合传输线的高效低功耗CMOS端接电路
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204300
R. Igarashi, T. Morikawa, N. Mii
{"title":"Effective low-power CMOS terminating circuit for coupled transmission lines","authors":"R. Igarashi, T. Morikawa, N. Mii","doi":"10.1109/ECTC.1992.204300","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204300","url":null,"abstract":"An effective low-power CMOS terminating circuit for coupled transmission lines is described. This CMOS terminating circuit substitutes for a terminating resistor at the receiving end of the line in order to provide substantial benefits in minimizing power dissipation, crosstalk, overshoot, and ringing. In notebook-type personal computers, it is important to minimize the power dissipation required for termination with improvement of crosstalk, overshoot, and ringing so as to extend battery life. Power dissipation is reduced to a quarter of that of shunt resistor termination and crosstalk is reduced to one half of that of series resistor termination. Furthermore, the CMOS terminating circuit can be effectively used as a damping resistor to eliminate ringing on a signal line which has a large inductance.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122630554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-permittivity ceramic dielectrics for tuning transmission in power electronic converters 电力电子变换器调谐传输用高介电常数陶瓷介质
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204264
W. Cronje, J. D. van Wyk, M.F.K. Holm
{"title":"High-permittivity ceramic dielectrics for tuning transmission in power electronic converters","authors":"W. Cronje, J. D. van Wyk, M.F.K. Holm","doi":"10.1109/ECTC.1992.204264","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204264","url":null,"abstract":"The fabrication and application of high-permittivity ceramic materials for use in power electronic circuits are investigated. The ability to manufacture materials with a wide range of epsilon /sub r/ values and the influence of dielectric permittivity on the circuit behaviour of a converter employing planar connections are studied. It is shown conclusively that the circuit behavior of a power electronic circuit can be modified by only varying the properties of the materials used for supporting the connections. This mechanism can be used to improve the power transmission characteristics of the connections. Methods are described whereby the dielectric properties of BaTiO/sub 3/-based materials can be varied over a very wide range of 4<or= epsilon /sub r/<or=1300. The material is manufactured in the form of tiles that can be used to support connections, acting both as insulation and as a medium to help control circuit performance.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122748682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Package architecture design and optimization tool AUDiT: Version 4.2 for inhomogeneous systems 包架构设计和优化工具AUDiT: 4.2版本，用于非同构系统
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204228
B. Hahne, D. E. O'Brien, J. Krusius
{"title":"Package architecture design and optimization tool AUDiT: Version 4.2 for inhomogeneous systems","authors":"B. Hahne, D. E. O'Brien, J. Krusius","doi":"10.1109/ECTC.1992.204228","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204228","url":null,"abstract":"AUDiT, a CAD (computer-aided-design) program for modeling single-board electronic systems, is described. Given user-specified inputs including the system's architectural hierarchy, the technologies used to implement chips, packages, and the board, and a list of critical paths. AUDiT provides extensive information about the resulting system. Systems can contain arbitrary inhomogeneous mixtures of chip and package types/technologies. Several analysis tools are provided to allow the user to explore parameter and architectural changes, with an interface built around X Windows to promote ease of use. For the advanced user, AUDiT provides configuration files, which allow modification of the computational models and addition of user models.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132525366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Precision flip-chip solder bump interconnects for optical packaging 用于光学封装的精密倒装凸点焊料互连
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204253
B. Imler, K. Scholz, M. Cobarruviaz, R. Haitz, V. K. Nagesh, C. Chao
{"title":"Precision flip-chip solder bump interconnects for optical packaging","authors":"B. Imler, K. Scholz, M. Cobarruviaz, R. Haitz, V. K. Nagesh, C. Chao","doi":"10.1109/ECTC.1992.204253","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204253","url":null,"abstract":"Solder bump flip chip technology is particularly well suited to the packaging of classes of devices, such as fine pitch LED (light emitting diode) array electrophotographic print heads, which place premiums on precision alignment, high electric interconnect density, close die placement, and low cost. The manufacturing feasibility of such an array was investigated, with particular emphasis on the quality of surface tension induced self-alignment associated with solder bump bonding. An array of LED diode array chips was fabricated employing 75 mu -dia. solder bumps on 156 mu m pitch. The chips were spaced 15 mu edge-to-edge, face down, on a glass substrate patterned with thin film metallization. Chip-to-substrate alignment errors in the X-Y plane were found to be under 1.5 mu m with a standard deviation of under 1.0 mu m, well below the 10-15 mu m error typical of the standard mechanical alignment method. Improvements in light output uniformity and a reduction in scattered light over arrays manufactured with conventional die placement and wire bonding were also observed.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123952016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Thermal aspects of pump-laser packaging 泵浦激光封装的热方面
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204305
H. van Tongeren, P. Thijs
{"title":"Thermal aspects of pump-laser packaging","authors":"H. van Tongeren, P. Thijs","doi":"10.1109/ECTC.1992.204305","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204305","url":null,"abstract":"A modified DIL-14 (dual in line-14) package for a pump-laser diode emitting at a wavelength of 1480 nm is described. By improving the thermal resistance of the housing, a thermal power of 1 W can be dissipated in the laser crystal. The mounting surface of the crystal assembly can be kept at 25 degrees C by a Peltier cooler operating at a current of 1 A for 65 degrees C ambient temperature. Under these conditions more than 60 mW is launched into the fiber pigtail.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124013665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An eutectic bonding technology at a temperature below the eutectic point 一种温度低于共晶点的共晶键合技术
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204252
C.Y. Wang, C.C. Lee
{"title":"An eutectic bonding technology at a temperature below the eutectic point","authors":"C.Y. Wang, C.C. Lee","doi":"10.1109/ECTC.1992.204252","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204252","url":null,"abstract":"The authors report a technique which needs only 240 degrees C to produce nearly eutectic Au-Sn bonding. After bonding, the device can take a postprocessing temperature of 250 degrees C without bonding degradation. The bonding medium consists of Au-Sn multilayer composite deposited directly on the object to be bonded. This technology also eliminates the preforms, reduces tin oxidation, and provides good control of bonding layer thickness. Results of bonding 2 mm*3 mm GaAs dice show that high-quality bondings are obtained, as evaluated by a scanning acoustic microscope. The specimens underwent 40 cycles of thermal shock test between -196 degrees C and 160 degrees C without bonding degradation and die cracking. Scanning electron microscopy and energy-dispersive X-ray studies reveal interesting characteristics of the bonding process. Melting point tests confirm that the bonding layer indeed has a melting temperature of 280 degrees C, higher than the 240 degrees C process temperature.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121643919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Investigation of thermo-mechanically induced stress in a PQFP 160 using finite element techniques 用有限元技术研究pqfp160的热机械诱导应力
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204247
G. Kelly, C. Lyden, C. O'Mathúna, J.S. Campbell
{"title":"Investigation of thermo-mechanically induced stress in a PQFP 160 using finite element techniques","authors":"G. Kelly, C. Lyden, C. O'Mathúna, J.S. Campbell","doi":"10.1109/ECTC.1992.204247","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204247","url":null,"abstract":"The authors use finite element (FE) techniques to illustrate how thermomechanical stresses are built up within a plastic IC package, due to encapsulation. Plane strain is chosen as the most suitable 2D FE model for the thermomechanical stress analysis of plastic packages. The compressive stress on the die is separated into direct and bending components of stress. This is used to show that the molding compound induces over half of the encapsulation stress into the die. An explanation of the compressive stress distribution throughout the die is presented. The encapsulation stress on the die can be eliminated by isolating the die from the package with a side buffer of soft material.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115013829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Thermal/electrical behavior of 1 300-nm quad laser arrays in various packaging arrangements 不同封装方式下1 300 nm四元激光阵列的热/电学行为
1992 Proceedings 42nd Electronic Components & Technology Conference Pub Date : 1992-05-18 DOI: 10.1109/ECTC.1992.204189
P. Hoh, A. Bates, A. Strijek, G. Costrini, A. Antreasyan, S. Scontras, J. Ferrario, E. Cahoon, A. Behfar-Rad
{"title":"Thermal/electrical behavior of 1 300-nm quad laser arrays in various packaging arrangements","authors":"P. Hoh, A. Bates, A. Strijek, G. Costrini, A. Antreasyan, S. Scontras, J. Ferrario, E. Cahoon, A. Behfar-Rad","doi":"10.1109/ECTC.1992.204189","DOIUrl":"https://doi.org/10.1109/ECTC.1992.204189","url":null,"abstract":"A number of packaging configurations were explored as possible candidates for use with quad 1300-nm laser arrays operating at aggregate multi-Gb data rates. The packaging arrangements considered were with InP/GaInAsP-based double heterostructure ridge lasers. Quad laser arrays on single chips were packaged both junction up and junction down. Packages included simple CMSH submounts in 9-mm headers and custom wired silicon carriers on multilayered high-speed packages. Electrical and thermal measurements confirmed that T0 can technology will not meet the requirements needed for multi-Gb/s data links. A package that would surpass the requirements would include optimized wire-bond lengths, wire-bond orientation, and sufficient heat-sinking for the laser array and its associated electronics. A packaging arrangement was investigated which included the optimized conditions mentioned above and a custom wired silicon submount. Electrical crosstalk noise was reduced to -37 dB. Thermal effects were reduced to a point where lasers were able to operate at over 110 degrees C. This package surpassed the thermal and electrical crosstalk noise requirements demanded for multi-Gb/s data communication links.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125001131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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