{"title":"一种温度低于共晶点的共晶键合技术","authors":"C.Y. Wang, C.C. Lee","doi":"10.1109/ECTC.1992.204252","DOIUrl":null,"url":null,"abstract":"The authors report a technique which needs only 240 degrees C to produce nearly eutectic Au-Sn bonding. After bonding, the device can take a postprocessing temperature of 250 degrees C without bonding degradation. The bonding medium consists of Au-Sn multilayer composite deposited directly on the object to be bonded. This technology also eliminates the preforms, reduces tin oxidation, and provides good control of bonding layer thickness. Results of bonding 2 mm*3 mm GaAs dice show that high-quality bondings are obtained, as evaluated by a scanning acoustic microscope. The specimens underwent 40 cycles of thermal shock test between -196 degrees C and 160 degrees C without bonding degradation and die cracking. Scanning electron microscopy and energy-dispersive X-ray studies reveal interesting characteristics of the bonding process. Melting point tests confirm that the bonding layer indeed has a melting temperature of 280 degrees C, higher than the 240 degrees C process temperature.<<ETX>>","PeriodicalId":125270,"journal":{"name":"1992 Proceedings 42nd Electronic Components & Technology Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"An eutectic bonding technology at a temperature below the eutectic point\",\"authors\":\"C.Y. Wang, C.C. Lee\",\"doi\":\"10.1109/ECTC.1992.204252\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report a technique which needs only 240 degrees C to produce nearly eutectic Au-Sn bonding. After bonding, the device can take a postprocessing temperature of 250 degrees C without bonding degradation. The bonding medium consists of Au-Sn multilayer composite deposited directly on the object to be bonded. This technology also eliminates the preforms, reduces tin oxidation, and provides good control of bonding layer thickness. Results of bonding 2 mm*3 mm GaAs dice show that high-quality bondings are obtained, as evaluated by a scanning acoustic microscope. The specimens underwent 40 cycles of thermal shock test between -196 degrees C and 160 degrees C without bonding degradation and die cracking. Scanning electron microscopy and energy-dispersive X-ray studies reveal interesting characteristics of the bonding process. Melting point tests confirm that the bonding layer indeed has a melting temperature of 280 degrees C, higher than the 240 degrees C process temperature.<<ETX>>\",\"PeriodicalId\":125270,\"journal\":{\"name\":\"1992 Proceedings 42nd Electronic Components & Technology Conference\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Proceedings 42nd Electronic Components & Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.1992.204252\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Proceedings 42nd Electronic Components & Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1992.204252","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An eutectic bonding technology at a temperature below the eutectic point
The authors report a technique which needs only 240 degrees C to produce nearly eutectic Au-Sn bonding. After bonding, the device can take a postprocessing temperature of 250 degrees C without bonding degradation. The bonding medium consists of Au-Sn multilayer composite deposited directly on the object to be bonded. This technology also eliminates the preforms, reduces tin oxidation, and provides good control of bonding layer thickness. Results of bonding 2 mm*3 mm GaAs dice show that high-quality bondings are obtained, as evaluated by a scanning acoustic microscope. The specimens underwent 40 cycles of thermal shock test between -196 degrees C and 160 degrees C without bonding degradation and die cracking. Scanning electron microscopy and energy-dispersive X-ray studies reveal interesting characteristics of the bonding process. Melting point tests confirm that the bonding layer indeed has a melting temperature of 280 degrees C, higher than the 240 degrees C process temperature.<>
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