发布求助
文献互助 智能选刊 最新文献

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

筛选
英文 中文
Magnetic Dynamics of Quasi-antiferromagnetic Layer Fabricated by 90 Degrees Magnetic Coupling 90度磁耦合制备准反铁磁层的磁动力学
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.e-5-03
S. Horiike, G. Nagashima, Y. Kurokawa, Y. Zhong, K. Yamanoi, T. Tanaka, K. Matsuyama, H. Yuasa
{"title":"Magnetic Dynamics of Quasi-antiferromagnetic Layer Fabricated by 90 Degrees Magnetic Coupling","authors":"S. Horiike, G. Nagashima, Y. Kurokawa, Y. Zhong, K. Yamanoi, T. Tanaka, K. Matsuyama, H. Yuasa","doi":"10.7567/ssdm.2019.e-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121664160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma Induced Damage on Inter-Metal Dielectric in Nano-meter FinFET Processes 等离子体对纳米FinFET工艺中金属间介电介质的损伤
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.n-6-03
C. Su
{"title":"Plasma Induced Damage on Inter-Metal Dielectric in Nano-meter FinFET Processes","authors":"C. Su","doi":"10.7567/ssdm.2019.n-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128764447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Practical Extraction Method of Interface State Density near Conduction Band Edge of 4H-SiC MOSFET Channel 4H-SiC MOSFET沟道导带边缘界面态密度的实用提取方法
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-6-04
S. Sato, K. Kobayashi, Y. Mori, D. Hisamoto, A. Shima
{"title":"Practical Extraction Method of Interface State Density near Conduction Band Edge of 4H-SiC MOSFET Channel","authors":"S. Sato, K. Kobayashi, Y. Mori, D. Hisamoto, A. Shima","doi":"10.7567/ssdm.2019.k-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131229830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor. 低功率隧道场效应晶体管原位掺杂GeSn纳米线的生长和电学性能。
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-5-03
T. Haffner, F. Bassani, P. Gentile, N. Pauc, E. Martínez, T. Baron, E. Robin, S. David, B. Salem
{"title":"Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor.","authors":"T. Haffner, F. Bassani, P. Gentile, N. Pauc, E. Martínez, T. Baron, E. Robin, S. David, B. Salem","doi":"10.7567/ssdm.2019.d-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131710291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pregrowth treatment induced below-bandgap states in GaAs 预生长处理诱导砷化镓的带隙下态
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.f-5-04
R. Roca, K. Fukui, H. Mizuno, M. Suzuki, I. Kamiya
{"title":"Pregrowth treatment induced below-bandgap states in GaAs","authors":"R. Roca, K. Fukui, H. Mizuno, M. Suzuki, I. Kamiya","doi":"10.7567/ssdm.2019.f-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133282245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Electret made of SiO2 Thin Film with Micro Bump Array to Avoid Electrostatic Stiction and Enhance Its Surface Potential 微碰撞阵列二氧化硅薄膜驻极体的研制以避免静电粘滞并提高其表面电位
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.j-5-04
M. Suzuki, Y. Onishi, T. Takahashi, S. Aoyagi
{"title":"Development of Electret made of SiO2 Thin Film with Micro Bump Array to Avoid Electrostatic Stiction and Enhance Its Surface Potential","authors":"M. Suzuki, Y. Onishi, T. Takahashi, S. Aoyagi","doi":"10.7567/ssdm.2019.j-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131705350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cross-Coupled Differential Multiple-Time-Programming Memory Cells by CMOS FinFET Technologies 基于CMOS FinFET技术的交叉耦合差分多时间编程存储单元
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.h-5-04
Yu-Fan Chiang, Che-Wei Chu, Y. Chih, J. Chang, C. Lin, Y. King
{"title":"Cross-Coupled Differential Multiple-Time-Programming Memory Cells by CMOS FinFET Technologies","authors":"Yu-Fan Chiang, Che-Wei Chu, Y. Chih, J. Chang, C. Lin, Y. King","doi":"10.7567/ssdm.2019.h-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"20 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114041861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RF Power Performance of 2DHG Diamond MOSFETs with thick ALD-Al2O3 Film 厚ALD-Al2O3膜2DHG金刚石mosfet的射频功率性能
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-5-02
K. Kudara, S. Imanishi, K. Horikawa, A. Hiraiwa, H. Kawarada
{"title":"RF Power Performance of 2DHG Diamond MOSFETs with thick ALD-Al2O3 Film","authors":"K. Kudara, S. Imanishi, K. Horikawa, A. Hiraiwa, H. Kawarada","doi":"10.7567/ssdm.2019.k-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication 利用Franz-Keldysh效应和雪崩倍增对垂直GaN p-n二极管面内载流子浓度非均匀性的高分辨率观测
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-7-02
S. Kawasaki, H. Fukushima, S. Usami, Y. Ando, A. Tanaka, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano
{"title":"High-Resolution Observation of In-Plane Carrier Concentration Nonuniformity in Vertical GaN p-n Diode Using Franz-Keldysh Effect and Avalanche Multiplication","authors":"S. Kawasaki, H. Fukushima, S. Usami, Y. Ando, A. Tanaka, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano","doi":"10.7567/ssdm.2019.k-7-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129015183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink 银纳米油墨在n-GaN外延层上形成印刷肖特基触点的均匀性表征
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.j-6-02
K. Shiojima, Y. Kashiwagi, A. Koizumi, M. Saitoh, T. Tamai, Y. Fujiwara
{"title":"Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink","authors":"K. Shiojima, Y. Kashiwagi, A. Koizumi, M. Saitoh, T. Tamai, Y. Fujiwara","doi":"10.7567/ssdm.2019.j-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-6-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1864 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128035776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信