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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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Synthesis and Characterization of Topological Crystalline Insulator SnTe Nanowires 拓扑晶体绝缘体SnTe纳米线的合成与表征
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.n-7-03
Y. Xing, L. Hong, X. Wang, S. Huang, H. Xu
{"title":"Synthesis and Characterization of Topological Crystalline Insulator SnTe Nanowires","authors":"Y. Xing, L. Hong, X. Wang, S. Huang, H. Xu","doi":"10.7567/ssdm.2019.n-7-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-7-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127318281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comprehensive Study of Metal-Induced Layer-Exchange for High-Quality Multilayer Graphene 高质量多层石墨烯金属诱导层交换的综合研究
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.g-6-04
H. Murata, Y. Nakajima, T. Suemasu, K. Toko
{"title":"Comprehensive Study of Metal-Induced Layer-Exchange for High-Quality Multilayer Graphene","authors":"H. Murata, Y. Nakajima, T. Suemasu, K. Toko","doi":"10.7567/ssdm.2019.g-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132039586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Controlling Color Conversion Efficiency between Monolayer Tungsten Diselenide and Quantum Dots through Plasmonic Effect of Silver Nanodisks Metasurface 利用银纳米片超表面等离子体效应控制单层二硒化钨与量子点之间的颜色转换效率
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-6-06
A. B. Lee, C.A. Lin, C. Chang, C.L. Yu, H.T. Lin, H. Kuo, M. Shih
{"title":"Controlling Color Conversion Efficiency between Monolayer Tungsten Diselenide and Quantum Dots through Plasmonic Effect of Silver Nanodisks Metasurface","authors":"A. B. Lee, C.A. Lin, C. Chang, C.L. Yu, H.T. Lin, H. Kuo, M. Shih","doi":"10.7567/ssdm.2019.d-6-06","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-06","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126709186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of highly sensitive aqueous chemical sensor using double-gate In-Ga-Zn-O nanofiber thin-film transistor 采用双栅In-Ga-Zn-O纳米纤维薄膜晶体管的高灵敏度水化学传感器的研制
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.a-6-03
E. Hong, W. Cho
{"title":"Development of highly sensitive aqueous chemical sensor using double-gate In-Ga-Zn-O nanofiber thin-film transistor","authors":"E. Hong, W. Cho","doi":"10.7567/ssdm.2019.a-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116136865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly oriented Si(111) films on lattice-mismatched single-crystalline substrates via aluminum-induced crystallization 通过铝诱导结晶在晶格错配单晶衬底上制备高取向Si(111)薄膜
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.f-6-06
M.F.Hainey Jr., C. Zhou, N. Usami
{"title":"Highly oriented Si(111) films on lattice-mismatched single-crystalline substrates via aluminum-induced crystallization","authors":"M.F.Hainey Jr., C. Zhou, N. Usami","doi":"10.7567/ssdm.2019.f-6-06","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-6-06","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121021293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic Crystal Nanolasers with Enhanced Wavelength Tunability by Waveguides 波导增强波长可调性的光子晶体纳米激光器
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.b-5-04
T. Lu, C. Lai, P. Lee
{"title":"Photonic Crystal Nanolasers with Enhanced Wavelength Tunability by Waveguides","authors":"T. Lu, C. Lai, P. Lee","doi":"10.7567/ssdm.2019.b-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132211301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective epitaxial p-SiGe Source-Drain Contacts: Low Contact Resistivity (1.5x10-9 ohm.cm2) by Optimizing Strain and Doping Concentration 通过优化应变和掺杂浓度，选择外延p-SiGe源漏触点:低接触电阻率(1.5x10-9欧姆。cm2)
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.n-5-04
C. Porret, Y.H. Huang, G. Rengo, H. Yu, M. Schaekers, J. Everaert, M. Heyns, A. Vohra, A. Hikavyy, E. Rosseel, R. Langer, R. Loo
{"title":"Selective epitaxial p-SiGe Source-Drain Contacts: Low Contact Resistivity (1.5x10-9 ohm.cm2) by Optimizing Strain and Doping Concentration","authors":"C. Porret, Y.H. Huang, G. Rengo, H. Yu, M. Schaekers, J. Everaert, M. Heyns, A. Vohra, A. Hikavyy, E. Rosseel, R. Langer, R. Loo","doi":"10.7567/ssdm.2019.n-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123193766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET 机械单轴应力对4H-SiC (0001) MOSFET迁移率增强的影响
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-6-02
W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, O. Nakatsuka
{"title":"Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET","authors":"W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, O. Nakatsuka","doi":"10.7567/ssdm.2019.k-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-6-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125074117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spin Polarization Characterization by Spin Hall Magnetoresistance in Ferrimagnetic Pt/Co1-xTbx bilayers 铁磁性Pt/Co1-xTbx双层自旋霍尔磁电阻表征自旋极化
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.e-6-02
Y. Xu, D. Chen, S. Tong, H. Chen, X. Qiu, D. Wei, J. Zhao
{"title":"Spin Polarization Characterization by Spin Hall Magnetoresistance in Ferrimagnetic Pt/Co1-xTbx bilayers","authors":"Y. Xu, D. Chen, S. Tong, H. Chen, X. Qiu, D. Wei, J. Zhao","doi":"10.7567/ssdm.2019.e-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-6-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131121075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semi-CNTs-based flexible TFTs fabricated by room-temperature printing with high performance 室温打印制备的高性能半碳纳米管柔性tft
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.j-6-04
Q. Sun, W. Li, X. Liu, M. Kanehara, J. Zhao, T. Minari
{"title":"Semi-CNTs-based flexible TFTs fabricated by room-temperature printing with high performance","authors":"Q. Sun, W. Li, X. Liu, M. Kanehara, J. Zhao, T. Minari","doi":"10.7567/ssdm.2019.j-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121657551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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