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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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Quantum annealing with spin lock technique 自旋锁技术的量子退火
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2020-03-03 DOI: 10.7567/ssdm.2019.e-1-05
H. Hakoshima, Y. Matsuzaki, Yuya Seki, S. Kawabata
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引用次数: 1
Thickness dependent crystal and electrical properties of polycrystalline Ge on a plastic substrate formed by solid-phase crystallization 固相结晶形成的塑料衬底上多晶锗的厚度依赖性晶体和电学性质
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.f-6-01
T. Imajo, T. Suemasu, K. Toko
{"title":"Thickness dependent crystal and electrical properties of polycrystalline Ge on a plastic substrate formed by solid-phase crystallization","authors":"T. Imajo, T. Suemasu, K. Toko","doi":"10.7567/ssdm.2019.f-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-6-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124398787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN 氮化镓中mg附着位错产生漏电流的微观原因
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-7-05
T. Nakano, K. Chokawa, Y. Harashima, M. Araidai, K. Shiraishi, A. Oshiyama, A. Kusaba, Y. Kangawa, A. Tanaka, Y. Honda, H. Amano
{"title":"Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN","authors":"T. Nakano, K. Chokawa, Y. Harashima, M. Araidai, K. Shiraishi, A. Oshiyama, A. Kusaba, Y. Kangawa, A. Tanaka, Y. Honda, H. Amano","doi":"10.7567/ssdm.2019.k-7-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128242293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 42-mV Startup Ring Oscillator Using Self-Bias Inverters for Extremely Low Voltage Energy Harvesting 一种42 mv启动环振荡器，使用自偏置逆变器进行极低电压能量收集
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.m-5-03
R. Matsuzuka, T. Terada, K. Matsumoto, M. Kitamura, T. Hirose
{"title":"A 42-mV Startup Ring Oscillator Using Self-Bias Inverters for Extremely Low Voltage Energy Harvesting","authors":"R. Matsuzuka, T. Terada, K. Matsumoto, M. Kitamura, T. Hirose","doi":"10.7567/ssdm.2019.m-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123370494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characteristics of 2D MoS2 ferroelectric memory transistor with ferroelectric Hf1-xZrxO2 gate structure 铁电Hf1-xZrxO2栅极结构二维MoS2铁电存储器晶体管的电学特性
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-6-04
S. Zhang, Y. Liu, G. Han, J. Zhang, Y. Hao, X. Wang
{"title":"Electrical characteristics of 2D MoS2 ferroelectric memory transistor with ferroelectric Hf1-xZrxO2 gate structure","authors":"S. Zhang, Y. Liu, G. Han, J. Zhang, Y. Hao, X. Wang","doi":"10.7567/ssdm.2019.d-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125622334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxygen vacancy distribution control for resistive switching of epitaxial TiO2-x thin films in four-terminal memristive devices 四端记忆器件中外延TiO2-x薄膜电阻开关的氧空位分布控制
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.g-6-03
R. Miyake, Z. Nagata, T. Tohei, A. Sakai
{"title":"Oxygen vacancy distribution control for resistive switching of epitaxial TiO2-x thin films in four-terminal memristive devices","authors":"R. Miyake, Z. Nagata, T. Tohei, A. Sakai","doi":"10.7567/ssdm.2019.g-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115872232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct Formation of Metal Patterns for Flexible Electronic Devices 柔性电子器件金属图案的直接形成
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.j-6-05
W. Li, Q. Sun, L. Li, X. Liu, T. Minari
{"title":"Direct Formation of Metal Patterns for Flexible Electronic Devices","authors":"W. Li, Q. Sun, L. Li, X. Liu, T. Minari","doi":"10.7567/ssdm.2019.j-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127053095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly efficient spin-orbit torque switching in a single GaMnAs thin film with perpendicular magnetic anisotropy 具有垂直磁各向异性的单GaMnAs薄膜中高效的自旋轨道转矩开关
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.e-6-05
M. Jiang, H. Asahara, S. Sato, T. Kanaki, H. Yamasaki, S. Ohya, M. Tanaka
{"title":"Highly efficient spin-orbit torque switching in a single GaMnAs thin film with perpendicular magnetic anisotropy","authors":"M. Jiang, H. Asahara, S. Sato, T. Kanaki, H. Yamasaki, S. Ohya, M. Tanaka","doi":"10.7567/ssdm.2019.e-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115523628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoresponsivity Evaluation of a Multi-Channel Graphene Nanoribbon based Field Effect Transistor Structure 基于多通道石墨烯纳米带的场效应晶体管结构的光响应性评价
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.b-5-02
J. A. Goundar, K. Suzuki, H. Miura
{"title":"Photoresponsivity Evaluation of a Multi-Channel Graphene Nanoribbon based Field Effect Transistor Structure","authors":"J. A. Goundar, K. Suzuki, H. Miura","doi":"10.7567/ssdm.2019.b-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115085121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyzing the effect of Rapid Thermal Annealing on Mg-doped ZnO EIS Structure Membrane for Na+ and K+ Sensing 分析快速热处理对mg掺杂ZnO EIS结构膜对Na+和K+传感的影响
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.g-5-03
C.F. Lin, C. H. Kao, K.L. Chen, Y. Lin, C.Y. Lin
{"title":"Analyzing the effect of Rapid Thermal Annealing on Mg-doped ZnO EIS Structure Membrane for Na+ and K+ Sensing","authors":"C.F. Lin, C. H. Kao, K.L. Chen, Y. Lin, C.Y. Lin","doi":"10.7567/ssdm.2019.g-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.g-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128729823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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