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Microscopic Reason for the Leakage Current due to the Mg-Attached Dislocation in GaN

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI:10.7567/ssdm.2019.k-7-05
T. Nakano, K. Chokawa, Y. Harashima, M. Araidai, K. Shiraishi, A. Oshiyama, A. Kusaba, Y. Kangawa, A. Tanaka, Y. Honda, H. Amano
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氮化镓中mg附着位错产生漏电流的微观原因
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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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