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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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A Printed Metal-oxide-free Cathode for Mechanically-durable and Ultra-flexible Organic Photovoltaics 一种用于机械耐用和超柔性有机光伏的印刷无金属氧化物阴极
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.a-4-03
Z. Jiang, K. Fukuda, T. Someya
{"title":"A Printed Metal-oxide-free Cathode for Mechanically-durable and Ultra-flexible Organic Photovoltaics","authors":"Z. Jiang, K. Fukuda, T. Someya","doi":"10.7567/ssdm.2019.a-4-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-4-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126211309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs 沉积后退火对ALD-SiO2/AlGaN/GaN mishemts电性能影响的估计
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-4-21
S. Yokoi, T. Kubo, T. Egawa
{"title":"Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs","authors":"S. Yokoi, T. Kubo, T. Egawa","doi":"10.7567/ssdm.2019.ps-4-21","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-4-21","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125998231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding 表面活化室温键合制备高功率gan -on-金刚石hemt
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.k-4-04
Hiza Shuichi, Fujikawa Masahiro, Takiguchi Yuki, Nishimura Kunihiko, Yagyu Eiji, Matsumae Takashi, Kurashima Yuichi, Takagi Hideki, Yamamuka Mikio
{"title":"High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding","authors":"Hiza Shuichi, Fujikawa Masahiro, Takiguchi Yuki, Nishimura Kunihiko, Yagyu Eiji, Matsumae Takashi, Kurashima Yuichi, Takagi Hideki, Yamamuka Mikio","doi":"10.7567/ssdm.2019.k-4-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-4-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127966983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
ZIF-67/PEDOT Hybrid Conductive Composite as a Superior Electrode for AllSolid-State Symmetrical Supercapacitor ZIF-67/PEDOT混合导电复合材料作为全固态对称超级电容器的优越电极
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-6-18
S. Sundriyal, V. Shrivastav, S. Mishra, A. Deep
{"title":"ZIF-67/PEDOT Hybrid Conductive Composite as a Superior Electrode for AllSolid-State Symmetrical Supercapacitor","authors":"S. Sundriyal, V. Shrivastav, S. Mishra, A. Deep","doi":"10.7567/ssdm.2019.ps-6-18","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-6-18","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128163462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurate and stable equal-pressure measurements of water vaportransmission rate of organic electronics packages reaching the10−6 g m−2 day−1 range 准确和稳定的等压测量达到10−6 g m−2天−1范围的有机电子封装的水蒸气透射率
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-7-09
T. Shimada
{"title":"Accurate and stable equal-pressure measurements of water vaportransmission rate of organic electronics packages reaching the10−6 g m−2 day−1 range","authors":"T. Shimada","doi":"10.7567/ssdm.2019.ps-7-09","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-7-09","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132016910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Inversion Channel Mobility in a GaN-based MOSFET gan基MOSFET的反转通道迁移率分析
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-4-20
D. Kikuta, T. Narita, T. Kachi
{"title":"Analysis of Inversion Channel Mobility in a GaN-based MOSFET","authors":"D. Kikuta, T. Narita, T. Kachi","doi":"10.7567/ssdm.2019.ps-4-20","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-4-20","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133114074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Transparent Cu2O Solar Cells for High-efficiency, Low-cost Tandem Photovoltaics 用于高效、低成本串联光伏发电的透明Cu2O太阳能电池研究
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-6-22
N. Nakagawa, S. Shibasaki, M. Yamazaki, Y. Honishi, Y. Someya-Hiraoka, K. Yamamoto
{"title":"Study of Transparent Cu2O Solar Cells for High-efficiency, Low-cost Tandem Photovoltaics","authors":"N. Nakagawa, S. Shibasaki, M. Yamazaki, Y. Honishi, Y. Someya-Hiraoka, K. Yamamoto","doi":"10.7567/ssdm.2019.ps-6-22","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-6-22","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122133113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Inductively Coupled Wireless Bus for Inter-Chiplet Communication 一种用于芯片间通信的电感耦合无线总线
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-sp-07
J. Kadomoto, S. Mitsuno, H. Irie, S. Sakai
{"title":"An Inductively Coupled Wireless Bus for Inter-Chiplet Communication","authors":"J. Kadomoto, S. Mitsuno, H. Irie, S. Sakai","doi":"10.7567/ssdm.2019.ps-sp-07","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-sp-07","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127422210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D SoC Design with TSV-less Power Supply Employing Highly Doped Silicon Via 采用高掺杂硅通孔的无tsv电源的3D SoC设计
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.m-3-02
K. Shiba, M. Hamada, T. Kuroda
{"title":"3D SoC Design with TSV-less Power Supply Employing Highly Doped Silicon Via","authors":"K. Shiba, M. Hamada, T. Kuroda","doi":"10.7567/ssdm.2019.m-3-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-3-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"513 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127023946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
ZrO2 Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications 用于非易失性存储器和模拟突触的ZrO2反铁电场效应晶体管
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.h-3-04
H. Liu, S. Zheng, G. Han, Y. Xu, Y. Liu, C. Wang, X. Wang, N. Yang, N. Zhong, Y. Hao
{"title":"ZrO2 Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications","authors":"H. Liu, S. Zheng, G. Han, Y. Xu, Y. Liu, C. Wang, X. Wang, N. Yang, N. Zhong, Y. Hao","doi":"10.7567/ssdm.2019.h-3-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-3-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129147001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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