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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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Sensitivity study on different gate dielectric dependence of DG-CNTFET using atomistic simulation NEGF approach 用原子模拟NEGF方法研究DG-CNTFET不同栅介电依赖性的灵敏度
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-8-15
C. Pandy, R. Narayanan, H. Mimura
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引用次数: 0
Achieving Fast Charging and Long-life Li-S Battery via Li passivated MoO 3 NR decorated Celgard Separator 通过锂钝化moo3nr装饰Celgard隔膜实现快速充电和长寿命锂电池
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.c-3-05
N. Kaisar, S. Jou, C. Chu
{"title":"Achieving Fast Charging and Long-life Li-S Battery via Li passivated MoO 3 NR decorated Celgard Separator","authors":"N. Kaisar, S. Jou, C. Chu","doi":"10.7567/ssdm.2019.c-3-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.c-3-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125900482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hole spin g-factor in p-type silicon single and double quantum dots p型硅单量子点和双量子点的空穴自旋g因子
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-9-01
H. Wei, S. Mizoguchi, R. Mizokuchi, T. Kodera
{"title":"Hole spin g-factor in p-type silicon single and double quantum dots","authors":"H. Wei, S. Mizoguchi, R. Mizokuchi, T. Kodera","doi":"10.7567/ssdm.2019.ps-9-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-9-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123702825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of the Leakage Current in GaN mediated through the Dislocation-Impurity Complex 位错-杂质复合物介导的氮化镓泄漏电流的建模
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-4-26
Y. Harashima, T. Nakano, A. Oshiyama, K. Shiraishi
{"title":"Modeling of the Leakage Current in GaN mediated through the Dislocation-Impurity Complex","authors":"Y. Harashima, T. Nakano, A. Oshiyama, K. Shiraishi","doi":"10.7567/ssdm.2019.ps-4-26","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-4-26","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116522543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Hall Effect and Band Dispersion in Artificially Stacked CVD Graphene 人工叠层CVD石墨烯中的量子霍尔效应和能带色散
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.d-3-04
H. Murano, K. Ikushima, T. Ikuta, K. Maehashi
{"title":"Quantum Hall Effect and Band Dispersion in Artificially Stacked CVD Graphene","authors":"H. Murano, K. Ikushima, T. Ikuta, K. Maehashi","doi":"10.7567/ssdm.2019.d-3-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-3-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"240 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122500909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Accuracy Improved Resistance Measurement Platform For Evaluation of Emerging Memory Materials 一种新型记忆材料评价精度提高的电阻测量平台
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.m-4-05
T. Maeda, Y. Omura, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa
{"title":"An Accuracy Improved Resistance Measurement Platform For Evaluation of Emerging Memory Materials","authors":"T. Maeda, Y. Omura, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa","doi":"10.7567/ssdm.2019.m-4-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-4-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121886636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of Al1-xTixOy thin films deposited by mist-CVD 雾- cvd沉积Al1-xTixOy薄膜的表征
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-10-08
Zenji Yatabe, K. Nishiyama, K. Nishimura, Y. Nakamura
{"title":"Characterization of Al1-xTixOy thin films deposited by mist-CVD","authors":"Zenji Yatabe, K. Nishiyama, K. Nishimura, Y. Nakamura","doi":"10.7567/ssdm.2019.ps-10-08","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-10-08","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129783317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Twin Formation in One Dimensional crystal growth of Si Thin Film During Micro Chevron Laser Beam Scanning 微v形激光束扫描过程中Si薄膜一维晶体生长中的孪晶形成
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-10-09
W. Yeh, A. H. Pham, S. Morito
{"title":"Twin Formation in One Dimensional crystal growth of Si Thin Film During Micro Chevron Laser Beam Scanning","authors":"W. Yeh, A. H. Pham, S. Morito","doi":"10.7567/ssdm.2019.ps-10-09","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-10-09","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128235748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-ray Photoelectron Spectroscopy Study of the Physical Chemistry of the TiN/Hf0.5Zr0.5O2 Interface TiN/Hf0.5Zr0.5O2界面物理化学的x射线光电子能谱研究
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-1-02
N. Barrett, W. Hamouda, A. Pancotti, C. Lubin, L. Tortech, C. Richter, U. Schroeder
{"title":"X-ray Photoelectron Spectroscopy Study of the Physical Chemistry of the TiN/Hf0.5Zr0.5O2 Interface","authors":"N. Barrett, W. Hamouda, A. Pancotti, C. Lubin, L. Tortech, C. Richter, U. Schroeder","doi":"10.7567/ssdm.2019.ps-1-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-1-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129338679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System 由Minimal Fab System制造的半英寸单晶片上的肖特基势垒二极管
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-4-12
T. Hanada, H. Umezawa, S. Ohmagari, D. Takeuchi, J. Kaneko
{"title":"Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System","authors":"T. Hanada, H. Umezawa, S. Ohmagari, D. Takeuchi, J. Kaneko","doi":"10.7567/ssdm.2019.ps-4-12","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-4-12","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126355821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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