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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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Surface Modification of SiO2 Thin Film using High-Dose Ion Implantation Technique as a Manufacturing Worthy Process 高剂量离子注入技术在SiO2薄膜表面改性中的应用
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.n-5-02
R. Wada, H. Kai, J. Sasaki, T. Kuroi, T. Ikejiri
{"title":"Surface Modification of SiO2 Thin Film using High-Dose Ion Implantation Technique as a Manufacturing Worthy Process","authors":"R. Wada, H. Kai, J. Sasaki, T. Kuroi, T. Ikejiri","doi":"10.7567/ssdm.2019.n-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133888809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Texture Control for Cu Hybrid Bonding Pads using a PVD Cu Process 用PVD铜工艺控制铜杂化焊盘的织构
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.j-5-02
J. Messemaeker, N. Jourdan, P. Nolmans, S.-W. Kim, G. Beyer
{"title":"Texture Control for Cu Hybrid Bonding Pads using a PVD Cu Process","authors":"J. Messemaeker, N. Jourdan, P. Nolmans, S.-W. Kim, G. Beyer","doi":"10.7567/ssdm.2019.j-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125161366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nearly Wavelength-shift Free (20-21) Semipolar Micro Light-emitting Diodes with Improved Performance via Atomic Layer Deposition 基于原子层沉积的近无波长移(20-21)半极微发光二极管
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.b-6-02
S. Chen, L.F. Chen, Y. Hsu, J. Song, J. Choi, C. Chen, C. Sher, P. T. Lee, A. Tzou, J. Han, H. Kuo
{"title":"Nearly Wavelength-shift Free (20-21) Semipolar Micro Light-emitting Diodes with Improved Performance via Atomic Layer Deposition","authors":"S. Chen, L.F. Chen, Y. Hsu, J. Song, J. Choi, C. Chen, C. Sher, P. T. Lee, A. Tzou, J. Han, H. Kuo","doi":"10.7567/ssdm.2019.b-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-6-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114561007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure 沉积后退火对AlSiO/GaN(0001)结构化学键合特性和填充电子缺陷的影响
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-5-04
A. Ohta, D. Kikuta, T. Narita, K. Itoh, K. Makihara, T. Kachi, S. Miyazaki
{"title":"Impact of Post Deposition Annealing on Chemical Bonding Features and Filled Electronic Defects of AlSiO/GaN(0001) Structure","authors":"A. Ohta, D. Kikuta, T. Narita, K. Itoh, K. Makihara, T. Kachi, S. Miyazaki","doi":"10.7567/ssdm.2019.k-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117125472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts 基于残余副产物物理分析的热氧化4H-SiC(0001)表面晶格畸变可能来源的研究
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-6-05
A. D. Hatmanto, K. Kita
{"title":"Investigation of the Possible Origins of Lattice Distortion at the Surface of Thermally-Oxidized 4H-SiC (0001) based on the Physical Analysis of Remained Byproducts","authors":"A. D. Hatmanto, K. Kita","doi":"10.7567/ssdm.2019.k-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"217 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122472184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rapid Laser Annealing Method for Printing Silver Electrodes in Organic Thin-Film Transistors 有机薄膜晶体管中银电极的快速激光退火印刷方法
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.j-6-03
C. Liu, K. Huang, F. Dai, X. Liu, T. Minari
{"title":"Rapid Laser Annealing Method for Printing Silver Electrodes in Organic Thin-Film Transistors","authors":"C. Liu, K. Huang, F. Dai, X. Liu, T. Minari","doi":"10.7567/ssdm.2019.j-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.j-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122848876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
388 K High Temperature Retention Study of 2D Hetero-stack Based Non-Volatile Memory 二维异质堆叠非易失性存储器388k高温保留研究
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-6-02
T. Sasaki, T. Taniguchi, K. Watanabe, K. Nagashio
{"title":"388 K High Temperature Retention Study of 2D Hetero-stack Based Non-Volatile Memory","authors":"T. Sasaki, T. Taniguchi, K. Watanabe, K. Nagashio","doi":"10.7567/ssdm.2019.d-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128951836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Co-porphyrin–functionalized CVD graphene ammonia sensor with high selectivity to hydrogen. 对氢具有高选择性的共卟啉功能化CVD石墨烯氨传感器。
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.a-5-04
K. Sawada, T. Tanaka, T. Yokoyama, R. Yamachi, Y. Oka, Y. Chiba, H. Masai, J. Terao, K. Uchida
{"title":"Co-porphyrin–functionalized CVD graphene ammonia sensor with high selectivity to hydrogen.","authors":"K. Sawada, T. Tanaka, T. Yokoyama, R. Yamachi, Y. Oka, Y. Chiba, H. Masai, J. Terao, K. Uchida","doi":"10.7567/ssdm.2019.a-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127263255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements 利用光电测量表征Ni/GaN(0001)界面
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-7-03
K. Watanabe, A. Ohta, N. Taoka, H. Yamada, M. Ikeda, K. Makihara, M. Shimizu, S. Miyazaki
{"title":"Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements","authors":"K. Watanabe, A. Ohta, N. Taoka, H. Yamada, M. Ikeda, K. Makihara, M. Shimizu, S. Miyazaki","doi":"10.7567/ssdm.2019.k-7-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117045169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE 邻近m-GaN MOVPE氧结合机理的理论探讨
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI: 10.7567/ssdm.2019.ps-4-14
F. Shintaku, Y. Kangawa, J. Iwata, A. Oshiyama, K. Shiraishi, A. Tanaka, H. Amano
{"title":"Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE","authors":"F. Shintaku, Y. Kangawa, J. Iwata, A. Oshiyama, K. Shiraishi, A. Tanaka, H. Amano","doi":"10.7567/ssdm.2019.ps-4-14","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-4-14","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124461707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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