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Estimation of post-deposition annealing effects on electrical properties of ALD-SiO2/AlGaN/GaN MIS-HEMTs

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI:10.7567/ssdm.2019.ps-4-21
S. Yokoi, T. Kubo, T. Egawa
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沉积后退火对ALD-SiO2/AlGaN/GaN mishemts电性能影响的估计
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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