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High-Power GaN-on-Diamond HEMTs Fabricated by Surface-Activated Room-Temperature Bonding

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-04 DOI:10.7567/ssdm.2019.k-4-04
Hiza Shuichi, Fujikawa Masahiro, Takiguchi Yuki, Nishimura Kunihiko, Yagyu Eiji, Matsumae Takashi, Kurashima Yuichi, Takagi Hideki, Yamamuka Mikio
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表面活化室温键合制备高功率gan -on-金刚石hemt
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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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