H. Liu, S. Zheng, G. Han, Y. Xu, Y. Liu, C. Wang, X. Wang, N. Yang, N. Zhong, Y. Hao
{"title":"ZrO2 Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications","authors":"H. Liu, S. Zheng, G. Han, Y. Xu, Y. Liu, C. Wang, X. Wang, N. Yang, N. Zhong, Y. Hao","doi":"10.7567/ssdm.2019.h-3-04","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/ssdm.2019.h-3-04","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}