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Practical Extraction Method of Interface State Density near Conduction Band Edge of 4H-SiC MOSFET Channel

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI:10.7567/ssdm.2019.k-6-04
S. Sato, K. Kobayashi, Y. Mori, D. Hisamoto, A. Shima
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4H-SiC MOSFET沟道导带边缘界面态密度的实用提取方法
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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