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Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor.

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI:10.7567/ssdm.2019.d-5-03
T. Haffner, F. Bassani, P. Gentile, N. Pauc, E. Martínez, T. Baron, E. Robin, S. David, B. Salem
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低功率隧道场效应晶体管原位掺杂GeSn纳米线的生长和电学性能。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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