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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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1-Chip ExG Recording System with Electrode Interface Evaluation Functions for Biologically Safe Recording 1芯片ExG记录系统与电极接口评估功能的生物安全记录
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.a-5-02
Z. Qian, H. Hashimoto, K.M. Lee, R. Yabuki, B. Du, H. Kino, T. Fukushima, K. Kiyoyama, T. Tanaka
{"title":"1-Chip ExG Recording System with Electrode Interface Evaluation Functions for Biologically Safe Recording","authors":"Z. Qian, H. Hashimoto, K.M. Lee, R. Yabuki, B. Du, H. Kino, T. Fukushima, K. Kiyoyama, T. Tanaka","doi":"10.7567/ssdm.2019.a-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-5-02","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124403420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier Transport Study on Triphenylamine-Thienothiophene-Based Hole Transport Material by Utilizing MIS-CELIV Method 利用MIS-CELIV方法研究三苯胺-噻吩基空穴输运材料的载流子输运
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.a-5-03
W. Kim, Y. Nishikawa, Thanh‐Tuân Bui, Quang-Duy Dao, A. Fujii, M. Ozaki
{"title":"Carrier Transport Study on Triphenylamine-Thienothiophene-Based Hole Transport Material by Utilizing MIS-CELIV Method","authors":"W. Kim, Y. Nishikawa, Thanh‐Tuân Bui, Quang-Duy Dao, A. Fujii, M. Ozaki","doi":"10.7567/ssdm.2019.a-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"61 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120887380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room-Temperature Valley-Polarized Light-Emitting Devices via Strained Monolayer Semiconductors 基于应变单层半导体的室温谷偏振发光器件
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-6-05
J. Pu, H. Matsuoka, Y. Kobayashi, Y. Miyata, T. Takenobu
{"title":"Room-Temperature Valley-Polarized Light-Emitting Devices via Strained Monolayer Semiconductors","authors":"J. Pu, H. Matsuoka, Y. Kobayashi, Y. Miyata, T. Takenobu","doi":"10.7567/ssdm.2019.d-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129674867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Temperature (< 130oC) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC 应力刺激GILC在绝缘子上低温(< 130℃)形成结晶锗膜
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.f-6-04
T. Nishijima, K. Kusano, K. Kudo, M. Furuta, Y. Kusuda, S. Motoyama, N. Naka, T. Numata, I. Tsunoda
{"title":"Low Temperature (< 130oC) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC","authors":"T. Nishijima, K. Kusano, K. Kudo, M. Furuta, Y. Kusuda, S. Motoyama, N. Naka, T. Numata, I. Tsunoda","doi":"10.7567/ssdm.2019.f-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130670599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-level Operations by Self-clamping Programming Scheme on Fine Floating Gate MTP Cells 精细浮栅MTP单元自箝位编程方案的多级运算
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.h-5-03
C. Chien, C. Chang, C. Lin, Y. King
{"title":"Multi-level Operations by Self-clamping Programming Scheme on Fine Floating Gate MTP Cells","authors":"C. Chien, C. Chang, C. Lin, Y. King","doi":"10.7567/ssdm.2019.h-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133899367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks 原位循环金属层氧化进一步改善Al2O3/4H-SiC(0001)栅堆界面性能
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.k-6-03
T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, O. Nakatsuka
{"title":"In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks","authors":"T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, O. Nakatsuka","doi":"10.7567/ssdm.2019.k-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132978290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Variability in Plasma-Induced Damage to Si Substrate on Device Performance and Its Application to Variability Assessment Methodology 等离子体损伤对器件性能的影响及其在可变性评估方法中的应用
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.n-6-05
T. Hamano, K. Urabe, K. Eriguchi
{"title":"Effects of Variability in Plasma-Induced Damage to Si Substrate on Device Performance and Its Application to Variability Assessment Methodology","authors":"T. Hamano, K. Urabe, K. Eriguchi","doi":"10.7567/ssdm.2019.n-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-6-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116747434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realization of Large Breakdown Voltage of GaAsSb-Based Backward Diodes using Carrier Depletion Effect Originating from Nanowires 利用纳米线载流子损耗效应实现gaassb基后向二极管的大击穿电压
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-5-04
T. Takahashi, K. Kawaguchi, M. Sato, M. Suhara, N. Okamoto
{"title":"Realization of Large Breakdown Voltage of GaAsSb-Based Backward Diodes using Carrier Depletion Effect Originating from Nanowires","authors":"T. Takahashi, K. Kawaguchi, M. Sato, M. Suhara, N. Okamoto","doi":"10.7567/ssdm.2019.d-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114761399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ReS2 Based High-k Dielectric Stack Charge-Trapping Memory 基于ReS2的高k介电堆叠电荷捕获存储器
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.d-6-03
Zehui Fan, M. Zhang, L. Chen, Q. Sun, D.W. Zhang
{"title":"ReS2 Based High-k Dielectric Stack Charge-Trapping Memory","authors":"Zehui Fan, M. Zhang, L. Chen, Q. Sun, D.W. Zhang","doi":"10.7567/ssdm.2019.d-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.d-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132790353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proposal of a Novel SPDT Switch and Duplexer Dual-Function Circuit 一种新型SPDT开关双工双功能电路的设计
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials Pub Date : 2019-09-05 DOI: 10.7567/ssdm.2019.m-5-04
H. Mizutani, R. Ishikawa, K. Honjo
{"title":"Proposal of a Novel SPDT Switch and Duplexer Dual-Function Circuit","authors":"H. Mizutani, R. Ishikawa, K. Honjo","doi":"10.7567/ssdm.2019.m-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.m-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126967957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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